component
SED10070GG
Public Made by Adomby adom
SINO IC MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SED10070GG
SINO IC · MOSFETs · DFN-8(5x6)
SED10070GG from SINO IC, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN5x6 package. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN5x6 package. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN5x6 package. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V absolute maximum. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 6 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 7 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 8 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 70 | A | Continuous | 1 | ||
| Pulsed Drain Current | ID | 280 | A | Pulsed | 1 | ||
| Total Power Dissipation | PD | 170 | W | TA=25℃ | 1 | ||
| Single-pulse avalanche energy | EAS | 580 | mJ | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS= 100V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8.2 | 9.8 | mΩ | VGS=10V, ID=39A | 2 | |
| Diode forward voltage | VSD | 0.85 | 1.2 | V | VGS=0V, IS=100A | 2 | |
| Diode forward current | IS | 57 | A | 2 | |||
| Forward Transconductance | gFS | 32 | S | VDS= 25V, ID=28A | 2 | ||
| Input Capacitance | Ciss | 4400 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 320 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 240 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 95 | nC | VDD=80V, VGS=10V, ID=39A | 2 | ||
| Gate Source Charge | Qgs | 18 | nC | VDD=80V, VGS=10V, ID=39A | 2 | ||
| Gate Drain Charge | Qgd | 25 | nC | VDD=80V, VGS=10V, ID=39A | 2 | ||
| Turn-On Delay Time | td(on) | 12 | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 45 | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 | ||
| Turn-On Rise Time | td(r) | 55 | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 | ||
| Turn-Off Fall Time | td(f) | 47 | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 | ||
| Reverse recovery time | Trr | 36 | ns | TJ=25℃,IF=28A di/dt=100A/μs | 2 | ||
| Reverse recovery charge | Qrr | 56 | nC | TJ=25℃,IF=28A di/dt=100A/μs | 2 | ||
| Junction to Ambient Thermal Resistance | RθJA | 0.88 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SED10070GG - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
sed10070gg-etched.step/sed10070gg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sed10070gg.step/sed10070gg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
70689d0da29f972c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SED10070GG
**SINO IC** · MOSFETs · DFN-8(5x6)
SED10070GG from SINO IC, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN5x6 package. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN5x6 package. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, one of three source pins tied together in the DFN5x6 package. |
| 4 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V absolute maximum. |
| 5 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 6 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 7 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 8 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 70 | A | Continuous | 1 |
| Pulsed Drain Current | ID | | | 280 | A | Pulsed | 1 |
| Total Power Dissipation | PD | | | 170 | W | TA=25℃ | 1 |
| Single-pulse avalanche energy | EAS | | | 580 | mJ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | ID=250μA, VGS=0 V | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | μA | VDS= 100V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | | | 100 | nA | VGS=20 V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 8.2 | 9.8 | mΩ | VGS=10V, ID=39A | 2 |
| Diode forward voltage | VSD | | 0.85 | 1.2 | V | VGS=0V, IS=100A | 2 |
| Diode forward current | IS | | | 57 | A | | 2 |
| Forward Transconductance | gFS | | 32 | | S | VDS= 25V, ID=28A | 2 |
| Input Capacitance | Ciss | | 4400 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | | 320 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 240 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 95 | | nC | VDD=80V, VGS=10V, ID=39A | 2 |
| Gate Source Charge | Qgs | | 18 | | nC | VDD=80V, VGS=10V, ID=39A | 2 |
| Gate Drain Charge | Qgd | | 25 | | nC | VDD=80V, VGS=10V, ID=39A | 2 |
| Turn-On Delay Time | td(on) | | 12 | | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 |
| Turn-Off Delay Time | td(off) | | 45 | | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 |
| Turn-On Rise Time | td(r) | | 55 | | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 |
| Turn-Off Fall Time | td(f) | | 47 | | ns | VDD=50V, VGS=10V, ID=39A, RGEN=2.5Ω | 2 |
| Reverse recovery time | Trr | | 36 | | ns | TJ=25℃,IF=28A di/dt=100A/μs | 2 |
| Reverse recovery charge | Qrr | | 56 | | nC | TJ=25℃,IF=28A di/dt=100A/μs | 2 |
| Junction to Ambient Thermal Resistance | RθJA | | 0.88 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `SED10070GG`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `sed10070gg-etched.step` / `sed10070gg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sed10070gg.step` / `sed10070gg.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884185872543744) (6 pp, sha256 `70689d0da29f972c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sed10070gg-datasheet.pdf)