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SEBT818BA

Public Made by Adom

by adom

SINO IC Bipolar (BJT), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SEBT818BA

SINO IC · Bipolar (BJT) · SOT-23-6L

SEBT818BA from SINO IC, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector of the PNP transistor, internally tied to the other collector pins (2, 5, 6); VCEO -30 V, IC -3 A continuous.
2 C passive Collector of the PNP transistor, internally tied to the other collector pins (1, 5, 6); VCBO -30 V, ICM -6 A peak.
3 B passive Base of the PNP transistor; IB -0.2 A max continuous, IBM -0.5 A peak, VEBO -5 V.
4 E passive Emitter of the PNP transistor; emitter-base voltage VEBO is limited to -5 V.
5 C passive Collector of the PNP transistor, internally tied to the other collector pins (1, 2, 6); VCEO -30 V.
6 C passive Collector of the PNP transistor, internally tied to the other collector pins (1, 2, 5); IC -3 A continuous.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cut-off Current ICBO -0.1 µA VCB = -30 V 2
Collector Cut-off Current ICBO -20 µA VCB = -30 V, TC = 125 °C 2
Emitter Cut-off Current IEBO -0.1 µA IC = 0; VEB = -5 V 2
Collector-Emitter Breakdown Voltage V(BR)CEO -30 V IB = 0, IC = -10 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.21 -0.5 V IC = -2 A, IB = -20 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.25 V IC = -1.2 A, IB = -20 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.075 V IC = -0.5 A, IB = -5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.74 -1.1 V IC = -0.5 A, IB = -5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC = -1.2 A, IB = -20 mA 2
Base-Emitter Saturation Voltage VBE(sat) -1.2 V IC = -2 A, IB = -20 mA 2
Base-Emitter Voltage (on) VBE(ON) -0.71 -1.1 V IC = -0.5 A, VCE = -2 V 2
DC Current Gain hFE 100 IC = -0.5 A, VCE = -1 V 2
Collector-Base Voltage (IE = 0) VCBO -30 V IE = 0 1
Collector-Emitter Voltage (IB = 0) VCEO -30 V IB = 0 1
Emitter-Base Voltage (IC = 0) VEBO -5 V IC = 0 1
Collector Current IC -3 A 1
Collector Peak Current ICM -6 A 1
Base Current IBB -0.2 A 1
Base Peak Current IBM -0.5 A 1
Total Dissipation Ptot 1.2 W TC = 25 °C 1
Storage Temperature Tstg -65 150 °C 1
Max. Operating Junction Temperature Tj 150 °C 1
Thermal Resistance Junction-ambient Rthj-amb 104.2 °C/W 2

CAD (KiCad official)

  • Symbol: SEBT818BA
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: sebt818ba-etched.step / sebt818ba-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sebt818ba.step / sebt818ba.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (6 pp, sha256 a23bb017cc9ef1b0, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF