component
SEBT8050
Public Made by Adomby adom
SINO IC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSEBT8050
SINO IC · Bipolar (BJT) · SOT-23
SEBT8050 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; hFE is 100 to 300 at VCE=1V, IC=50mA and VBE is max 1.2V at IC=500mA. |
| 2 | Emitter | passive | Emitter of the PNP transistor; emitter current IE is rated -800 mA and VEBO is 5V. |
| 3 | Collector | passive | Collector of the PNP transistor; IC max is 1500 mA, VCEO is 30V, VCBO is 35V and VCE(sat) is max 0.5V at IC=500mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 35 | V | Ta=25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | 30 | V | Ta=25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | Ta=25℃ | 1 | ||
| Emitter Current | IE | -800 | mA | Ta=25℃ | 1 | ||
| Collector Power Dissipation | PC | 625 | mW | Ta=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | Ta=25℃ | 1 | ||
| Storage temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector Cut-off Current | ICBO | 50 | nA | VCB=15v | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -35 | V | IC=0.5mA | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -30 | V | IC=1mA | 1 | ||
| DC Current Gain | hFE(1) | 100 | 300 | VCE=1v, IC=50mA | 1 | ||
| DC Current Gain | hFE(2) | 60 | VCE=1v, IC=350mA | 1 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=500mA, IB=20mA | 1 | ||
| Base-Emitter Voltage | VBE | 1.2 | V | VCE=1v, IC=500mA | 1 |
CAD (KiCad official)
- Symbol:
SEBT8050 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sebt8050-etched.step/sebt8050-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sebt8050.step/sebt8050.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (4 pp, sha256
6da37b8c8bdd437b, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).