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SE9926

Public Made by Adom

by adom

SINO IC MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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se9926-etched.glb Publish 0.1.0 · Ray 2h ago
se9926-etched.step se9926: factory component page (tier=lcsc) · Ray 2h ago
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SE9926

SINO IC · MOSFETs · SOP-8

SE9926 from SINO IC, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDS = 20V, ID = 6A).
2 G1 input Gate of MOSFET 1; VGS rated ±10V, RDS(ON) < 27.5mΩ at VGS=4.5V.
3 S2 passive Source of MOSFET 2 (N-channel, VDS = 20V, ID = 6A).
4 G2 input Gate of MOSFET 2; VGS rated ±10V, RDS(ON) < 27.5mΩ at VGS=4.5V.
5 D2 passive Drain of MOSFET 2, tied to pins 5 and 6; VDS max 20V, ID 6A continuous, 25A pulsed.
6 D2 passive Drain of MOSFET 2, tied to pins 5 and 6; VDS max 20V, ID 6A continuous, 25A pulsed.
7 D1 passive Drain of MOSFET 1, tied to pins 7 and 8; VDS max 20V, ID 6A continuous, 25A pulsed.
8 D1 passive Drain of MOSFET 1, tied to pins 7 and 8; VDS max 20V, ID 6A continuous, 25A pulsed.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -10 10 V 1
Drain Current-Continuous ID 6 A Ta=25℃ 1
Current-Pulsed IDM 25 A Note 1 1
Maximum Power Dissipation PD 1.5 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 83 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V ID=250μA 1
Zero Gate Voltage Drain Current IDSS 0.8 μA VDS=20V,VGS=0V 1
Gate-Body Leakage Current IGSS -80 80 nA VGS=±10V,VDS=0V 1
Gate Threshold Voltage VGS(th) 0.45 0.65 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 21 27.5 mΩ VGS=4.5V, ID=4.5A 2
Drain-Source On-State Resistance RDS(ON) 30 37.5 mΩ VGS=2.5V, ID=3.5A 2
Turn-on Delay Time td(on) 10 20 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-on Rise Time tr 11 25 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-Off Delay Time td(off) 35 70 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-Off Fall Time tf 30 60 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Total Gate Charge Qg 10 15 nC VDS=10V,ID=6A, V=4.5V 2

CAD (KiCad official)

  • Symbol: SE9926
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: se9926-etched.step / se9926-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se9926.step / se9926.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (6 pp, sha256 a1f800e46da5dc8f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF