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SE9435

Public Made by Adom

by adom

SINO IC MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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se9435-etched.glb Publish 0.1.0 · Ray 23d ago
se9435-etched.step se9435: factory component page (tier=lcsc) · Ray 23d ago
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SE9435

SINO IC · MOSFETs · SOP-8

SE9435 from SINO IC, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the device is rated for VDS of -30 V and continuous drain current of -5.3 A at TA=25°C.
2 S passive Source of the P-channel MOSFET, tied to the same source terminal as pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to the same source terminal as pins 1 and 2.
4 G input Gate of the P-channel MOSFET; maximum gate-source voltage is ±20 V, with threshold VGS(th) between -1 and -3 V at ID=-250μA.
5 D passive Drain of the P-channel MOSFET, connected internally with pins 6, 7 and 8; RDS(ON) is 50 mΩ max at VGS=-10 V.
6 D passive Drain of the P-channel MOSFET, connected with pins 5, 7 and 8; pulsed drain current is -20 A max.
7 D passive Drain of the P-channel MOSFET, connected with pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, connected with pins 5, 6 and 7; drain-source voltage is -30 V max.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5.3 A @TA=25°C 1
Continuous Drain Current ID -4.7 A @TA=70°C 1
Pulsed Drain Current IDM -20 A Note 1: pulse width limited by Max. junction temperature 1
Power Dissipation PD 2.5 W @TA=25°C 1
Linear Derating Factor 0.02 W/°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Thermal Resistance Junction-to-Ambient Rthj-amb 50 °C/W Note 3: surface mounted on 1 in² copper pad of FR4 board 1
Thermal Resistance Junction-to-Ambient Rthj-amb 125 °C/W Note 3: mounted on minimum copper pad of FR4 board 2
Drain-Source Breakdown Voltage BVDSS -30 V ID= -250μA, VGS=0 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30 V, VGS=0 V 2
Zero Gate Voltage Drain Current IDSS -25 μA VDS= -24 V, VGS=0 V (TJ=70°C) 2
Gate-Body leakage current IGSS -100 100 nA VDS= 0 V, VGS= ±20 V 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS= VGS, ID= -250μA 2
Static Drain-Source On-Resistance RDS(ON) 50 mΩ VGS = -10 V, ID = -5.3 A 2
Static Drain-Source On-Resistance RDS(ON) 90 mΩ VGS = -4.5 V, ID = -4.2A 2
Forward Transconductance gFS 10 S VDS= -10V, ID= -5.3 A 2
Diode Forward Voltage VSD -1.2 V IS= -2.6 A, VGS= 0 V 2
Body-Diode Continuous Current IS -2.08 A VD=VG=0V, VS=-1.2 V 2

CAD (KiCad official)

  • Symbol: SE9435
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: se9435-etched.step / se9435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se9435.step / se9435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (7 pp, sha256 c290473ed43b1263, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF