component

SE85130GA

Public Made by Adom

by adom

SINO-IC MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsse85130gafactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SE85130GA

SINO-IC · MOSFETs · TO-220

SE85130GA from SINO-IC, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V and a threshold VGS(th) of 2.5 to 4.5 V.
2 D passive Drain; rated for VDS of 85 V and continuous drain current of 130 A (320 A pulsed), and is also connected to the tab.
3 S passive Source; the current return terminal of the N-channel MOSFET, with a body diode to the drain.

Key specifications

Parameter Value
Manufacturer SINO-IC
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current Continuous ID 130 A Continuous 1
Drain Current Pulsed ID 320 A Pulsed 1
Single Pulse Avalanche Energy EAS 700 mJ 1
Total Power Dissipation PD 145 W TC=25℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 85 V ID=250μA, VGS=0 V 2
Drain to Source Leakage Current IDSS 1 μA VDS=85V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=20V 2
Gate Threshold Voltage VGS(th) 2.5 3.3 4.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 4.6 5.8 mΩ VGS=10V, ID=55A 2
Forward Transconductance gFS 40 S VDS=10V, ID=55A 2
Input Capacitance Ciss 3870 pF VGS=0V, VDS=40V, f=1MHz 2
Output Capacitance Coss 500 pF VGS=0V, VDS=40V, f=1MHz 2
Reverse Transfer Capacitance Crss 43 pF VGS=0V, VDS=40V, f=1MHz 2
Total Gate Charge Qg 54 nC VGS=10V, VDS=40V, ID=55A 2
Gate Source Charge Qgs 20 nC VGS=10V, VDS=40V, ID=55A 2
Gate Drain Charge Qgd 9 nC VGS=10V, VDS=40V, ID=55A 2
Turn-On Delay Time td(on) 18 ns VGS=10V, VDS=40V, RGEN=4.7Ω, ID=55A 2
Turn-Off Delay Time td(off) 28 ns VGS=10V, VDS=40V, RGEN=4.7Ω, ID=55A 2
Turn-On Rise Time td(r) 8 ns VGS=10V, VDS=40V, RGEN=4.7Ω, ID=55A 2
Turn-Off Fall Time td(f) 8 ns VGS=10V, VDS=40V, RGEN=4.7Ω, ID=55A 2

CAD (KiCad official)

  • Symbol: SE85130GA
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: se85130ga-etched.step / se85130ga-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se85130ga.step / se85130ga.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO-IC datasheet (6 pp, sha256 d32e2486a9d3c855, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF