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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

SE8205A

SINO IC · MOSFETs · SOT-23-6

SE8205A from SINO IC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of MOSFET 1; VDS rated 20 V, continuous drain current 6 A per the absolute maximum ratings.
2	D1/D2	passive	Common drain of MOSFET 1 and MOSFET 2 (internally joined, shared with pin 5); VDS rated 20 V.
3	S2	passive	Source of MOSFET 2; VDS rated 20 V, continuous drain current 6 A per the absolute maximum ratings.
4	G2	input	Gate of MOSFET 2; gate-source voltage limited to ±10 V absolute maximum, threshold 0.45 V min to 1.2 V max at 250 µA.
5	D1/D2	passive	Common drain of MOSFET 1 and MOSFET 2 (internally joined, shared with pin 2); VDS rated 20 V.
6	G1	input	Gate of MOSFET 1; gate-source voltage limited to ±10 V absolute maximum, threshold 0.45 V min to 1.2 V max at 250 µA.

Key specifications

Parameter	Value
Manufacturer	SINO IC
Package	SOT-23-6
Category	Transistors/Thyristors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			20	V		1
Gate-Source Voltage	VGS	-10		10	V	Printed as ±10 V	1
Drain Current, Continuous	ID			6	A	Note 1	1
Drain Current, Pulsed	IDM			25	A		1
Maximum Power Dissipation	PD			1.5	W		1
Operating Junction Temperature Range	TJ	-55		150	°C		1
Drain-Source Breakdown Voltage	BVDSS	20			V	ID=250μA, VGS=0 V	2
Zero Gate Voltage Drain Current	IDSS			1	μA	VDS=20V, VGS=0 V	2
Gate-Body Leakage	IGSS	-80		80	nA	VDS=0V, VGS=±12 V	2
Gate Threshold Voltage	VGS(th)	0.45	0.6	1.2	V	VDS=VGS ID=250μA	2
Static Drain-Source On-Resistance	RDS(ON)		24.5		mΩ	VGS=4.0V, ID=6.8A	2
Forward Transconductance	gFS	3			S	VDS=5V, ID=5A	2
Input Capacitance	Ciss		600		pF	VGS=0V, VDS=8V, f=1.0MHz	2
Output Capacitance	Coss		330		pF	VGS=0V, VDS=8V, f=1.0MHz	2
Reverse Transfer Capacitance	Crss		140		pF	VGS=0V, VDS=8V, f=1.0MHz	2
Total Gate Charge	Qg		10	15	nC	VGS=4.5V VDS=10V ID=6A	2
Gate Source Charge	Qgs		2.3		nC	VGS=4.5V VDS=10V ID=6A	2
Gate Drain Charge	Qgd		3		nC	VGS=4.5V VDS=10V ID=6A	2
Turn-On Delay Time	td(on)		10	20	ns	VGEN=4.0V RGEN=10Ω VDD=10V ID=1A	2
Turn-Off Delay Time	td(off)		35	70	ns	VGEN=4.0V RGEN=10Ω VDD=10V ID=1A	2
Turn-On Rise Time	td(r)		11	25	ns	VGEN=4.0V RGEN=10Ω VDD=10V ID=1A	2
Turn-Off Fall Time	td(f)		30	60	ns	VGEN=4.0V RGEN=10Ω VDD=10V ID=1A	2

CAD (KiCad official)

Symbol: SE8205A
Footprint: Package_TO_SOT_SMD:SOT-23-6
3D model: SOT-23-6 (KiCad packages3D, STEP)
3D model files: se8205a-etched.step / se8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se8205a.step / se8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: SINO IC datasheet (6 pp, sha256 a68d593f895bc529, retrieved 2026-10-15, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF