component
SE80100G
Public Made by Adomby adom
SINO IC MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSE80100G
SINO IC · MOSFETs · TO-263
SE80100G from SINO IC, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with a typical gate threshold of 1.5 to 2.5 V at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain; drain-source voltage rated 80 V, continuous drain current 100 A and pulsed 370 A. |
| 3 | S | passive | Source; source terminal of the N-channel MOSFET, with RDS(ON) of 4.9 mΩ at VGS=10 V, ID=40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 80 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, Continuous | ID | 100 | A | 1 | |||
| Drain Current, Pulsed | 370 | A | 1 | ||||
| Total Power Dissipation | PD | 125 | W | TA=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 750 | mJ | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS= 64V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.5 | 2.5 | V | VDS= VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.9 | mΩ | VGS=10V, ID=40A | 2 | ||
| Thermal Resistance Junction to Case (t≤10s) | RθJC | 1.2 | ℃/W | t≤10s | 2 | ||
| Input Capacitance | Ciss | 4120 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 520 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 200 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 58 | nC | VGS=10V, VDS=64V, ID=40A | 2 | ||
| Gate Source Charge | Qgs | 15 | nC | VGS=10V, VDS=64V, ID=40A | 2 | ||
| Gate Drain Charge | Qgd | 19 | nC | VGS=10V, VDS=64V, ID=40A | 2 | ||
| Turn-On Delay Time | td(on) | 34 | ns | VGS=10V, VDS=40V, RGEN=4.7Ω, ID=2A | 2 | ||
| Turn-Off Delay Time | td(off) | 103 | ns | VGS=10V, VDS=40V, RGEN=4.7Ω, ID=2A | 2 | ||
| Turn-On Rise Time | td(r) | 95 | ns | VGS=10V, VDS=40V, RGEN=4.7Ω, ID=2A | 2 | ||
| Turn-Off Fall Time | td(f) | 33 | ns | VGS=10V, VDS=40V, RGEN=4.7Ω, ID=2A | 2 |
CAD (KiCad official)
- Symbol:
SE80100G - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
se80100g-etched.step/se80100g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se80100g.step/se80100g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (7 pp, sha256
c33ca833e3d52c09, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).