# SE6050B

**SINO IC** · MOSFETs · TO-252

SE6050B from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V absolute maximum, with RDS(ON) of 11 mΩ specified at VGS=10 V. |
| 2 | D | passive | Drain; drain-source voltage rated 60 V, continuous drain current 50 A and pulsed 220 A. |
| 3 | S | passive | Source; connects to the body diode anode, with diode forward current IS of 50 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | ID=250μA, VGS=0 V | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | μA | VDS= 60V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS |  |  | 100 | nA | VGS=20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS=VGS,ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11 | 15 | mΩ | VGS=10V, ID=4A | 2 |
| Forward Transconductance | gFS | 24 |  |  | S | VDS=5V, ID=24A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=40A | 2 |
| Diode Forward Current | IS |  |  | 50 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current Continuous | ID |  |  | 50 | A | Continuous | 1 |
| Drain Current Pulsed | ID |  |  | 220 | A | Pulsed | 1 |
| Total Power Dissipation | PD |  |  | 80 | W | @TA=25℃ | 1 |
| Single pulse avalanche energy | EAS |  |  | 115 | mJ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance Junction to Case | RθJC |  |  | 1.88 | ℃/W |  | 1 |
| Derating factor |  |  | 0.53 |  | W/℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `SE6050B`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `se6050b-etched.step` / `se6050b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se6050b.step` / `se6050b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588902328514850816) (5 pp, sha256 `bd35e88c9207c4d5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/se6050b-datasheet.pdf)