component
SE6020DB
Public Made by Adomby adom
SINO IC MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
SE6020DB
SINO IC · MOSFETs · TO-252
SE6020DB from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive pin, gate-source voltage limited to ±20 V absolute maximum. |
| 2 | D | passive | Drain; connected to the tab, drain-source voltage rated 60 V and continuous drain current 20 A (60 A pulsed). |
| 3 | S | passive | Source; connected to the body diode anode, diode forward current rated 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS= VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 24 | 30 | mΩ | VGS=10V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Diode Forward Current | IS | 20 | A | 2 | |||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, Continuous | ID | 20 | A | Continuous | 1 | ||
| Drain Current, Pulsed | ID | 60 | A | Pulsed | 1 | ||
| Total Power Dissipation | PD | 45 | W | @TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 3.3 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SE6020DB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
se6020db-etched.step/se6020db-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se6020db.step/se6020db.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (7 pp, sha256
dc14cb6208a730e6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SE6020DB
**SINO IC** · MOSFETs · TO-252
SE6020DB from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive pin, gate-source voltage limited to ±20 V absolute maximum. |
| 2 | D | passive | Drain; connected to the tab, drain-source voltage rated 60 V and continuous drain current 20 A (60 A pulsed). |
| 3 | S | passive | Source; connected to the body diode anode, diode forward current rated 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | ID=250μA, VGS=0 V | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | | | 100 | nA | VGS=20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 24 | 30 | mΩ | VGS=10V, ID=20A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=20A | 2 |
| Diode Forward Current | IS | | | 20 | A | | 2 |
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current, Continuous | ID | | | 20 | A | Continuous | 1 |
| Drain Current, Pulsed | ID | | | 60 | A | Pulsed | 1 |
| Total Power Dissipation | PD | | | 45 | W | @TA=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 3.3 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `SE6020DB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `se6020db-etched.step` / `se6020db-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se6020db.step` / `se6020db.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588906457030381568) (7 pp, sha256 `dc14cb6208a730e6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/se6020db-datasheet.pdf)