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Ray Publish 0.1.0 bb4fd3a 17d ago

SE4607

SINO IC · MOSFETs · SO-8

SE4607 from SINO IC, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (channel 1), which is rated VDS 20V.
2 G1 input Gate of the N-channel MOSFET (channel 1), with an absolute maximum VGS of ±8V.
3 S2 passive Source of the P-channel MOSFET (channel 2), which is rated VDS -20V.
4 G2 input Gate of the P-channel MOSFET (channel 2), with an absolute maximum VGS of ±8V.
5 D2 passive Drain of the P-channel MOSFET (channel 2), tied to pins 5 and 6, with continuous ID of -2.8A.
6 D2 passive Drain of the P-channel MOSFET (channel 2), tied to pins 5 and 6, with continuous ID of -2.8A.
7 D1 passive Drain of the N-channel MOSFET (channel 1), tied to pins 7 and 8, with continuous ID of 4.2A.
8 D1 passive Drain of the N-channel MOSFET (channel 1), tied to pins 7 and 8, with continuous ID of 4.2A.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage (N-channel) VGS -8 8 V 1
Gate-Source Voltage (P-channel) VGS -8 8 V 1
Drain-Source Voltage (N-channel) VDS 20 V 1
Drain-Source Voltage (P-channel) VDS -20 V 1
Drain Current-Continuous (N-channel) ID 4.2 A 1
Drain Current-Continuous (P-channel) ID -2.8 A 1
Drain Current-Pulsed (N-channel) IDM 9 A Note 1 1
Drain Current-Pulsed (P-channel) IDM -9 A Note 1 1
Total Power Dissipation PD 1.2 W 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction to Ambient RθJA 62.5 ℃/W Note 2 1
Gate-Body Leakage Current (N-channel) IGSS -100 100 nA VGS=±8V, VDS=0V 2
Gate Threshold Voltage (N-channel) VGS(th) 0.6 1.2 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance (N-channel) RDS(ON) 20 45 mΩ VGS=4.5V, ID=2.8A 2
Total Gate Charge (N-channel) Qg 5.2 10 nC VGS=4.5V, VDS=10V, ID=3.6A 2
Turn-On Delay Time (N-channel) td(on) 7 15 ns VGS=4.5V, VDS=10V, RGEN=6Ω, ID=4.5A 2
Turn-Off Delay Time (N-channel) td(off) 16 60 ns VGS=4.5V, VDS=10V, RGEN=6Ω, ID=4.5A 2
Turn-On Rise Time (N-channel) td(r) 55 80 ns VGS=4.5V, VDS=10V, RGEN=6Ω, ID=4.5A 2
Turn-Off Fall Time (N-channel) td(f) 20 25 ns VGS=4.5V, VDS=10V, RGEN=6Ω, ID=4.5A 2
Gate-Body Leakage Current (P-channel) IGSS -100 100 nA VGS=±10V, VDS=0V 3
Static Drain-Source On-Resistance (P-channel) RDS(ON) 100 150 mΩ VGS=-4.5V, ID=2.8A 3

CAD (KiCad official)

  • Symbol: SE4607
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: se4607-etched.step / se4607-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se4607.step / se4607.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (9 pp, sha256 820afff3742743c7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF