component
SE3080K
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SINO IC MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SE3080K
SINO IC · MOSFETs · TO-252-2(DPAK)
SE3080K from SINO IC, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and a threshold of 1 V min to 3 V max at ID=250μA. |
| 2 | D | passive | Drain, connected to the tab; VDS is rated at 30 V maximum with continuous drain current of 80 A. |
| 3 | S | passive | Source of the N-channel MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance (SE3080K) | RDS(ON) | 4.5 | 6.5 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance (SE3080K) | RDS(ON) | 7.5 | 10 | mΩ | VGS=4.5V, ID=24A | 2 | |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 80 | A | Continuous | 1 | ||
| Drain Current Pulsed | ID | 170 | A | Pulsed | 1 | ||
| Total Power Dissipation | PD | 83 | W | @TA=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 285 | mJ | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 1.8 | ℃/W | Junction to Case | 1 |
CAD (KiCad official)
- Symbol:
SE3080K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
se3080k-etched.step/se3080k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se3080k.step/se3080k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
ecb677d42bced680, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SE3080K
**SINO IC** · MOSFETs · TO-252-2(DPAK)
SE3080K from SINO IC, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and a threshold of 1 V min to 3 V max at ID=250μA. |
| 2 | D | passive | Drain, connected to the tab; VDS is rated at 30 V maximum with continuous drain current of 80 A. |
| 3 | S | passive | Source of the N-channel MOSFET. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance (SE3080K) | RDS(ON) | | 4.5 | 6.5 | mΩ | VGS=10V, ID=30A | 2 |
| Static Drain-Source On-Resistance (SE3080K) | RDS(ON) | | 7.5 | 10 | mΩ | VGS=4.5V, ID=24A | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current Continuous | ID | | | 80 | A | Continuous | 1 |
| Drain Current Pulsed | ID | | | 170 | A | Pulsed | 1 |
| Total Power Dissipation | PD | | | 83 | W | @TA=25℃ | 1 |
| Single pulse avalanche energy | EAS | | | 285 | mJ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 1.8 | ℃/W | Junction to Case | 1 |
## CAD (KiCad official)
- Symbol: `SE3080K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `se3080k-etched.step` / `se3080k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se3080k.step` / `se3080k.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588902328514580480) (6 pp, sha256 `ecb677d42bced680`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/se3080k-datasheet.pdf)