# SE3018

**SINO IC** · MOSFETs · SOT-323

SE3018 from SINO IC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum and the gate threshold voltage VGS(th) is 1 V min to 2.5 V max at ID=250μA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with continuous drain current rated at 0.3 A and pulsed at 14 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, with drain-source voltage rated at 50 V maximum and RDS(ON) of 2.3 Ω typ (4 Ω max) at VGS=4.5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 50 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current, Continuous | ID |  |  | 0.3 | A |  | 1 |
| Drain Current, Pulsed |  |  |  | 14 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 0.35 | W | @TA=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 50 |  |  | V | ID=250μA, VGS=0 V | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | μA | VDS= 50V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS |  |  | 100 | nA | VGS=12V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2.3 | 4 | Ω | VGS=4.5V, ID=20A | 2 |
| Input Capacitance | Ciss | 3080 | 3860 | 4630 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Output Capacitance | Coss | 520 | 740 | 960 | pF |  | 2 |
| Reverse Transfer Capacitance | Crss | 350 | 580 | 810 | pF |  | 2 |
| Total Gate Charge | Qg | 28 | 36 | 43 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Gate Source Charge | Qgs | 7 | 9 | 11 | nC |  | 2 |
| Gate Drain Charge | Qgd | 7 | 12 | 17 | nC |  | 2 |
| Thermal Resistance, Junction to Case (t≤10s) | RθJC |  | 30 | 40 | ℃/W | t≤10s | 2 |
| Turn-On Delay Time | td(on) |  | 7 |  | ns | VGS=10V, VDS=10V, RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 70 |  | ns |  | 2 |
| Turn-On Rise Time | td(r) |  | 8 |  | ns |  | 2 |
| Turn-Off Fall Time | td(f) |  | 18 |  | ns |  | 2 |

## CAD (KiCad official)

- Symbol: `SE3018`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `se3018-etched.step` / `se3018-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se3018.step` / `se3018.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911527251857408) (5 pp, sha256 `13777361467964cd`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/se3018-datasheet.pdf)