component
SE30100B
Public Made by Adomby adom
SINO IC MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
| se30100b-etched.glb | 8d ago |
| se30100b-etched.step | 8d ago |
| se30100b-hero.glb | 8d ago |
| se30100b-hero.overlay.json | 8d ago |
| se30100b.glb | 8d ago |
| se30100b.kicad_mod | 8d ago |
| se30100b.kicad_sym | 8d ago |
| se30100b.lbr | 8d ago |
| se30100b.step | 8d ago |
SE30100B
SINO IC · MOSFETs · TO-252
SE30100B from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS limited to ±20 V absolute maximum, with gate threshold of 1 V min to 3 V max at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDS rated 30 V and continuous drain current 100 A (400 A pulsed). |
| 3 | S | passive | Source; body-diode continuous current is 100 A max with forward voltage up to 1.2 V at IS=30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 3 | 4 | mΩ | VGS=10V, ID=20A | 2 | |
| Forward Transconductance | gFS | 50 | S | VDS=10V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=30A, VGS=0V | 2 | ||
| Max. Body-Diode Continuous Current | IS | 100 | A | 2 | |||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 100 | A | Continuous | 1 | ||
| Drain Current Pulsed | ID | 400 | A | Pulsed | 1 | ||
| Avalanche Energy | EAS | 350 | mJ | L=0.1mH | 1 | ||
| Total Power Dissipation | PD | 110 | W | TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Junction to Ambient Thermal Resistance | RθJA | 75 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
SE30100B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
se30100b-etched.step/se30100b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se30100b.step/se30100b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
07df76c4b4bec9c8, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).