component
SE2N65
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SINO IC MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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SE2N65
SINO IC · MOSFETs · TO-252
SE2N65 from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated MOSFET control terminal. VGS(th) = 2.5-4.5 V; absolute maximum VGS = ±30 V; gate-body leakage IGSS = 100 nA max @ VGS = 30 V. Drive with VGS = 10 V for RDS(on) = 3.5 Ω typ. |
| 2 | D | passive | Drain. Power terminal, typically connected to the higher potential in an N-channel high-side/low-side switching topology. BVDSS = 650 V; IDSS = 1 µA max @ VDS = 650 V. Continuous ID = 2 A, pulsed 8 A. Electrically common to the mounting tab. |
| 3 | S | passive | Source. Power/return terminal and reference for VGS. Body diode: VSD = 1.4 V max @ IS = 2 A, trr = 300 ns typ, QRR = 2.2 µC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
SE2N65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
se2n65-etched.step/se2n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se2n65.step/se2n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (None pp, sha256
613381f4720344ee, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SE2N65
**SINO IC** · MOSFETs · TO-252
SE2N65 from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated MOSFET control terminal. VGS(th) = 2.5-4.5 V; absolute maximum VGS = ±30 V; gate-body leakage IGSS = 100 nA max @ VGS = 30 V. Drive with VGS = 10 V for RDS(on) = 3.5 Ω typ. |
| 2 | D | passive | Drain. Power terminal, typically connected to the higher potential in an N-channel high-side/low-side switching topology. BVDSS = 650 V; IDSS = 1 µA max @ VDS = 650 V. Continuous ID = 2 A, pulsed 8 A. Electrically common to the mounting tab. |
| 3 | S | passive | Source. Power/return terminal and reference for VGS. Body diode: VSD = 1.4 V max @ IS = 2 A, trr = 300 ns typ, QRR = 2.2 µC. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `SE2N65`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `se2n65-etched.step` / `se2n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se2n65.step` / `se2n65.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590456196793999360) (None pp, sha256 `613381f4720344ee`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/se2n65-datasheet.pdf)