component

SE2302U

Public Made by Adom

by adom

SINO IC MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsse2302ufactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SE2302U

SINO IC · MOSFETs · SOT-323

SE2302U from SINO IC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±8 V maximum, with a gate threshold of 0.6 V min to 1.2 V max at ID=250 µA.
2 S passive Source; continuous drain current is rated 2.4 A (9 A pulsed) and the maximum continuous body-diode forward current is 1.6 A.
3 D passive Drain; drain-source voltage is rated at 20 V maximum, with RDS(ON) below 60 mΩ at VGS=4.5 V.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Drain Current, Continuous (Note 1) ID 2.4 A 1
Drain Current, Pulsed ID 9 A 1
Total Power Dissipation PD 1.25 W 1
Operating Junction Temperature Range TJ -50 150 °C 1
Maximum Junction-to-Ambient θJA 100 ./W t ≤ 10s 1
Drain-Source Breakdown Voltage BVDSS 20 V ID=250μA, VGS=0 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20 V, VGS=0 V 2
Gate-Body leakage current IGSS 100 nA VDS=0 V, VGS=±8 V 2
Gate Threshold Voltage VGS(th) 0.6 1.2 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 43 60 mΩ VGS=4.5V, ID=2.8A 2
Static Drain-Source On-Resistance RDS(ON) 52 115 mΩ VGS=2.5V, ID=2.0A 2
Static Drain-Source On-Resistance RDS(ON) 80 130 mΩ VGS=1.8V, ID=2.0A 2
Turn-On Time TON 7 15 ns VDS=10V, ID=1A, VGS=4.5V, RGEN=6Ω 2
Turn-Off Time TOFF 16 60 ns VDS=10V, ID=1A, VGS=4.5V, RGEN=6Ω 2
Turn-on Rise Time Tr 55 80 ns VDS=10V, ID=1A, VGS=4.5V, RGEN=6Ω 2
Turn-on Fall Time Tf 20 25 ns VDS=10V, ID=1A, VGS=4.5V, RGEN=6Ω 2
Total Gate Charge Qg(10) 5.2 10 nC VDS=10V, ID=3.6A, VGS=4.5V 2
Drain-Source Diode Forward Voltage VSD 0.76 1.2 V VGS=0 V, IS=1.0 A 2
Maximum Continuous Drain-Source Diode Forward Current IS 1.6 A 2
Input Capacitance Ciss 450 pF 2
Output Capacitance Coss 70 pF VGS=0V, VDS=10V, f=1MHz 2
Reverse Transfer Capacitance Crss 43 pF 2
Gate-Source Charge Qgs 0.65 nC VDS=10V, ID=3.6A, VGS=4.5V 2
Gate-Drain Charge Qgd 1.5 nC VDS=10V, ID=3.6A, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: SE2302U
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: se2302u-etched.step / se2302u-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se2302u.step / se2302u.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (6 pp, sha256 cac73500a92bc3f9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF