component

SE2301

Public Made by Adom

by adom

SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 24d ago
viewers se2301: viewers · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
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README.md Publish 0.1.0 · Ray 24d ago
se2301-etched.glb Publish 0.1.0 · Ray 24d ago
se2301-etched.step se2301: factory component page (tier=lcsc) · Ray 24d ago
se2301-hero.glb se2301: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
se2301-hero.overlay.json Publish 0.1.0 · Ray 24d ago
se2301.glb Publish 0.1.0 · Ray 24d ago
se2301.kicad_mod Publish 0.1.0 · Ray 24d ago
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se2301.lbr Publish 0.1.0 · Ray 24d ago
se2301.step Publish 0.1.0 · Ray 24d ago

SE2301

SINO IC · MOSFETs · SOT-23

SE2301 from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±8 V absolute maximum, with threshold VGS(th) of -0.45 V at ID=-250μA.
2 S passive Source of the P-channel MOSFET; continuous drain current is -2.8 A (pulsed -8 A).
3 D passive Drain of the P-channel MOSFET; drain-source voltage rated -20 V with RDS(ON) of 100 mΩ max at VGS=-4.5 V.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Drain Current Continuous ID -2.8 A Continuous (Note 1) 1
Drain Current Pulsed ID -8 A Pulsed 1
Total Power Dissipation PD 0.9 W @TA=25°C 1
Total Power Dissipation PD 0.57 W @TA=75°C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS -20 V ID=-250μA, VGS=0 V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=20 V, VGS=0 V 2
Gate-Body Leakage Current IGSS -0.1 0.1 μA VDS=0 V, VGS=±10 V 2
Gate Threshold Voltage VGS(th) -0.45 V VDS=VGS, ID=-250μA 2
Static Drain-Source On-Resistance RDS(ON) 69 100 mΩ VGS=-4.50V, ID=-2.8 A 2
Static Drain-Source On-Resistance RDS(ON) 83 150 mΩ VGS=-2.5V, ID=-2.0A 2
Forward Transconductance gFS 6.5 S VDS=5V, ID=4.5A 2

CAD (KiCad official)

  • Symbol: SE2301
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: se2301-etched.step / se2301-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se2301.step / se2301.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (7 pp, sha256 cda523701843d662, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF