component
SE138U
Public Made by Adomby adom
SINO IC MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SE138U
SINO IC · MOSFETs · SOT-323
SE138U from SINO IC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a gate threshold of 0.8 V min, 1.3 V typ and 1.5 V max at VDS=VGS, ID=1 mA. |
| 2 | S | passive | Source of the N-channel MOSFET, with a body diode to the drain rated for 0.22 A source current and 0.8 V typ, 1.4 V max forward voltage. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for VDS 60 V, 0.22 A continuous and 0.88 A pulsed drain current, with RDS(ON) of 0.7 Ω at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, Continuous | ID | 0.22 | A | Continuous | 1 | ||
| Drain Current, Pulsed | ID | 0.88 | A | Pulsed | 1 | ||
| Total Power Dissipation | PD | 0.36 | W | TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 350 | ℃/W | 1 | |||
| Drain to Source Leakage Current | IDSS | 100 | nA | VDS= 30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.3 | 1.5 | V | VDS= VGS, ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.7 | Ω | VGS=10V, ID=0.22A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1 | Ω | VGS=4.5V, ID=0.22A | 2 | ||
| Input Capacitance | Ciss | 27 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 13 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 6 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 1.7 | 2.4 | nC | VGS=10V, VDS=25V, ID=0.22A | 2 | |
| Gate Source Charge | Qgs | 0.1 | nC | 2 | |||
| Gate Drain Charge | Qgd | 0.4 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 2.5 | 5 | ns | VGS=10V, VDS=30V, RGEN=6Ω, ID=0.29A | 2 | |
| Turn-Off Delay Time | td(off) | 20 | 36 | ns | 2 | ||
| Turn-On Rise Time | td(r) | 9 | 18 | ns | 2 | ||
| Turn-Off Fall Time | td(f) | 7 | 14 | ns | 2 | ||
| Source Current | IS | 0.22 | A | IF=0.44A, VDS=0V, dI/dt=100A/μs | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.4 | V | 2 |
CAD (KiCad official)
- Symbol:
SE138U - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
se138u-etched.step/se138u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se138u.step/se138u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
e9c6b133284cce84, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SE138U
**SINO IC** · MOSFETs · SOT-323
SE138U from SINO IC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a gate threshold of 0.8 V min, 1.3 V typ and 1.5 V max at VDS=VGS, ID=1 mA. |
| 2 | S | passive | Source of the N-channel MOSFET, with a body diode to the drain rated for 0.22 A source current and 0.8 V typ, 1.4 V max forward voltage. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for VDS 60 V, 0.22 A continuous and 0.88 A pulsed drain current, with RDS(ON) of 0.7 Ω at VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current, Continuous | ID | | | 0.22 | A | Continuous | 1 |
| Drain Current, Pulsed | ID | | | 0.88 | A | Pulsed | 1 |
| Total Power Dissipation | PD | | | 0.36 | W | TA=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | | 350 | ℃/W | | 1 |
| Drain to Source Leakage Current | IDSS | | | 100 | nA | VDS= 30V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | | | 100 | nA | VGS=20V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.3 | 1.5 | V | VDS= VGS, ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 0.7 | Ω | VGS=10V, ID=0.22A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 1 | Ω | VGS=4.5V, ID=0.22A | 2 |
| Input Capacitance | Ciss | | 27 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | | 13 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 6 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 1.7 | 2.4 | nC | VGS=10V, VDS=25V, ID=0.22A | 2 |
| Gate Source Charge | Qgs | | 0.1 | | nC | | 2 |
| Gate Drain Charge | Qgd | | 0.4 | | nC | | 2 |
| Turn-On Delay Time | td(on) | | 2.5 | 5 | ns | VGS=10V, VDS=30V, RGEN=6Ω, ID=0.29A | 2 |
| Turn-Off Delay Time | td(off) | | 20 | 36 | ns | | 2 |
| Turn-On Rise Time | td(r) | | 9 | 18 | ns | | 2 |
| Turn-Off Fall Time | td(f) | | 7 | 14 | ns | | 2 |
| Source Current | IS | | | 0.22 | A | IF=0.44A, VDS=0V, dI/dt=100A/μs | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.4 | V | | 2 |
## CAD (KiCad official)
- Symbol: `SE138U`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `se138u-etched.step` / `se138u-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se138u.step` / `se138u.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588946009746001920) (6 pp, sha256 `e9c6b133284cce84`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/se138u-datasheet.pdf)