component

SE120120GA

Public Made by Adom

by adom

SINO-IC MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsse120120gafactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
se120120ga / README.md
History Download
Ray Publish 0.1.0 ec691a1 5h ago

SE120120GA

SINO-IC · MOSFETs · TO-220

SE120120GA from SINO-IC, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.5 V min, 3.3 V typ and 4.5 V max at VDS=VGS, ID=250 µA.
2 D passive Drain; drain-source voltage rated at 120 V, continuous drain current 129 A and pulsed 480 A, with RDS(ON) of 4.4 mΩ typ at VGS=10 V; connected to the mounting tab.
3 S passive Source; body diode forward current IS is 129 A with VSD of 1.2 V max at IS=129 A.

Key specifications

Parameter Value
Manufacturer SINO-IC
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 120 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current Continuous ID 129 A Continuous 1
Drain Current Pulsed ID 480 A Pulsed 1
Single Pulse Avalanche Energy EAS 1000 mJ 1
Total Power Dissipation PD 185 W TC=25℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction to Case RθJC 0.8 ℃/W t≤10s 1
Drain-Source Breakdown Voltage BVDSS 120 V ID=250μA, VGS=0 V 2
Drain to Source Leakage Current IDSS 1 μA VDS=120V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VGS=20V 2
Gate Threshold Voltage VGS(th) 2.5 3.3 4.5 V VDS=VGS,ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 4.4 6.1 mΩ VGS=10V, ID=60A 2
Diode Forward Current IS 129 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=129A 2
Forward Transconductance gFS 60 S VDS=10V, ID=60A 2
Input Capacitance Ciss 5600 pF VGS=0V, VDS=50V, f=1MHz 2
Output Capacitance Coss 641 pF VGS=0V, VDS=50V, f=1MHz 2
Reverse Transfer Capacitance Crss 28 pF VGS=0V, VDS=50V, f=1MHz 2
Total Gate Charge Qg 84.7 nC VGS=10V, VDS=60V, ID=60A 2
Gate Source Charge Qgs 30.6 nC VGS=10V, VDS=60V, ID=60A 2
Gate Drain Charge Qgd 18.3 nC VGS=10V, VDS=60V, ID=60A 2
Turn-On Delay Time td(on) 16 ns VGS=10V, VDS=60, ID=60A 2
Turn-Off Delay Time td(off) 45 ns VGS=10V, VDS=60, ID=60A 2
Turn-On Rise Time td(r) 67 ns VGS=10V, VDS=60, ID=60A 2
Turn-Off Fall Time td(f) 14 ns VGS=10V, VDS=60, ID=60A 2
Reverse Recovery Time trr 60 ns TJ=25℃, IF=IS, Di/dt=100A/μs 2
Reverse Recovery Charge Qrr 140 nC TJ=25℃, IF=IS, Di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SE120120GA
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: se120120ga-etched.step / se120120ga-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se120120ga.step / se120120ga.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO-IC datasheet (7 pp, sha256 3103bbb1489e4d9f, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF