component
SE100180GA
Public Made by Adomby adom
SINO IC MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
SE100180GA
SINO IC · MOSFETs · TO-220
SE100180GA from SINO IC, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and a threshold of 2.0 to 4.0 V (2.8 V typ) at ID=250μA. |
| 2 | D | passive | Drain, also connected to the tab; VDS rated 100 V and continuous drain current 180 A (400 A pulsed). |
| 3 | S | passive | Source; RDS(ON) is 2.5 mΩ typ (2.8 mΩ max) at VGS=10V, ID=40A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.5 | 2.8 | mΩ | VGS=10V, ID=40A | 2 | |
| Forward Transconductance | gFS | 90 | S | VDS=10V, ID=20A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, Continuous | ID | 180 | A | 1 | |||
| Drain Current, Pulsed | ID | 400 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 1000 | mJ | 1 | |||
| Total Power Dissipation | PD | 300 | W | @TC=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 0.53 | ℃/W | t≤10s | 2 |
CAD (KiCad official)
- Symbol:
SE100180GA - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
se100180ga-etched.step/se100180ga-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se100180ga.step/se100180ga.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
39c45d6d01535c23, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SE100180GA
**SINO IC** · MOSFETs · TO-220
SE100180GA from SINO IC, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and a threshold of 2.0 to 4.0 V (2.8 V typ) at ID=250μA. |
| 2 | D | passive | Drain, also connected to the tab; VDS rated 100 V and continuous drain current 180 A (400 A pulsed). |
| 3 | S | passive | Source; RDS(ON) is 2.5 mΩ typ (2.8 mΩ max) at VGS=10V, ID=40A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | ID=250μA, VGS=0 V | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | | | 100 | nA | VGS=20V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.5 | 2.8 | mΩ | VGS=10V, ID=40A | 2 |
| Forward Transconductance | gFS | 90 | | | S | VDS=10V, ID=20A | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current, Continuous | ID | | | 180 | A | | 1 |
| Drain Current, Pulsed | ID | | | 400 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 1000 | mJ | | 1 |
| Total Power Dissipation | PD | | | 300 | W | @TC=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction to Case | RθJC | | | 0.53 | ℃/W | t≤10s | 2 |
## CAD (KiCad official)
- Symbol: `SE100180GA`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `se100180ga-etched.step` / `se100180ga-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se100180ga.step` / `se100180ga.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588892217893535745) (6 pp, sha256 `39c45d6d01535c23`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/se100180ga-datasheet.pdf)