component
SE10015
Public Made by Adomby adom
SINO IC MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| se10015-etched.glb | 7d ago |
| se10015-etched.step | 7d ago |
| se10015-hero.glb | 7d ago |
| se10015-hero.overlay.json | 7d ago |
| se10015.glb | 7d ago |
| se10015.kicad_mod | 7d ago |
| se10015.kicad_sym | 7d ago |
| se10015.lbr | 7d ago |
| se10015.step | 7d ago |
SE10015
SINO IC · MOSFETs · TO-252-2(DPAK)
SE10015 from SINO IC, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives VGS absolute maximum of ±20 V and a gate threshold of 1 V (min) at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain, the exposed mounting tab (center lead removed); the datasheet gives VDS of 100 V and continuous ID of 15 A (60 A pulsed). |
| 3 | S | passive | Source; the datasheet gives IS=15 A for the body diode with a forward voltage of 1.2 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252-2(DPAK) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, Continuous | ID | 15 | A | 1 | |||
| Drain Current, Pulsed | ID | 60 | A | 1 | |||
| Total Power Dissipation | PD | 50 | W | TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS= 100V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 67 | 80 | mΩ | VGS=10V, ID=15A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=15A, VGS=0V | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 25 | ℃/W | 1 | |||
| Gate Threshold Voltage | VGS(th) | 1 | V | VDS= VGS, ID=250μA | 2 | ||
| Forward Transconductance | gFS | 10 | S | VDS=5V, ID=15A | 2 | ||
| Total Gate Charge | Qg | 22.3 | nC | VGS=10V, VDS=50V, ID=10A | 2 | ||
| Gate Source Charge | Qgs | 2.87 | nC | 2 | |||
| Gate Drain Charge | Qgd | 6.14 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 15 | ns | VGS=10V, VDS=50V, RL=6.4Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 25 | ns | 2 | |||
| Turn-On Rise Time | td(r) | 5 | ns | 2 | |||
| Turn-Off Fall Time | td(f) | 7 | ns | 2 |
CAD (KiCad official)
- Symbol:
SE10015 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files:
se10015-etched.step/se10015-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se10015.step/se10015.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
2887b69e6eb2f8c1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).