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Contents

README

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SDM033N06D

SINEDEVICE · MOSFETs · TO-252

SDM033N06D from SINEDEVICE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with a typical threshold of 1.6 V.
2 D passive Drain, also the exposed tab; drain-source voltage up to 60 V and continuous current 20 A at TC=25°C.
3 S passive Source; body diode continuous current rated 20 A and pulsed 80 A.

Key specifications

Parameter Value
Manufacturer SINEDEVICE
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 20 A TC=25°C 1
Continuous Drain Current ID 13 A TC=100°C 1
Pulsed Drain Current (1) IDM 80 A 1
Avalanche Energy (2) EAS 18 mJ Note 2: TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=8.5A 1
Power Dissipation PD 27.7 W TC=25°C 1
Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Drain-Source Breakdown Voltage BVDSS 60 V ID=250μA, VGS =0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS =0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS =±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 26 33 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 33 45 mΩ VGS=4.5V, ID=5A 2
Maximum Body-Diode Pulsed Current ISM 80 A 2
Maximum Body-Diode Continuous Current IS 20 A 2
Thermal resistance from junction to case RθJC 5.4 °C /W 3
Diode Forward Voltage VSD 1.2 V IS=20A, VGS=0V 2
Input Capacitance Ciss 1149 pF VGS=0V, VDS=25V, f=1MHz 2
Output Capacitance Coss 58.7 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse Transfer Capacitance Crss 49.5 pF VGS=0V, VDS=25V, f=1MHz 2
Total Gate Charge Qg 20.5 nC VGS=10V, VDS=30V, ID=10A 2
Gate Source Charge Qgs 3.9 nC VGS=10V, VDS=30V, ID=10A 2
Gate Drain Charge Qgd 5.5 nC VGS=10V, VDS=30V, ID=10A 2
Turn-On Delay Time tD(on) 7.7 ns VGS=10V, VDS=30V, ID=20A, RGEN=1.8Ω 2
Turn-On Rise Time tr 21 ns VGS=10V, VDS=30V, ID=20A, RGEN=1.8Ω 2
Turn-Off Delay Time tD(off) 17 ns VGS=10V, VDS=30V, ID=20A, RGEN=1.8Ω 2
Turn-Off Fall Time tf 25 ns VGS=10V, VDS=30V, ID=20A, RGEN=1.8Ω 2
Body Diode Reverse Recovery Time trr 31 ns IF=20A, di/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 45 nC IF=20A, di/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: SDM033N06D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sdm033n06d-etched.step / sdm033n06d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sdm033n06d.step / sdm033n06d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINEDEVICE datasheet (7 pp, sha256 b9fb3e21a278e16b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF