# SDM021NU02S

**SINEDEVICE** · MOSFETs · SOT-23

SDM021NU02S from SINEDEVICE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12V maximum, threshold 0.5V min to 1V max at ID=250μA. |
| 2 | S | passive | Source; body-diode continuous current to 6.5A, continuous drain current 6.5A at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage rated 20V maximum, pulsed drain current 26A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SINEDEVICE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS |  |  | 5 | μA | VDS=20V, VGS=0V, TJ=55℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 15 | 21 | mΩ | VGS=4.5V, ID=4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 18 | 30 | mΩ | VGS=2.5V, ID=3A | 2 |
| Diode Forward Voltage | VSD |  | 0.8 | 1 | V | IS=3A, VGS=0V | 2 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6.5 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 4.1 | A | TA=100℃ | 1 |
| Power Dissipation | PD |  |  | 1.3 | W | TA=25℃ | 1 |
| Power Dissipation | PD |  |  | 0.5 | W | TA=100℃ | 1 |
| Avalanche Energy | EAS |  |  | 17 | mJ | note (3): L=0.1mH, VGS=10V, VDS=10V | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance from junction to ambient | RθJA |  |  | 94 | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `SDM021NU02S`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sdm021nu02s-etched.step` / `sdm021nu02s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sdm021nu02s.step` / `sdm021nu02s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SINEDEVICE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603406295865716736) (7 pp, sha256 `1df0cf5c6147b61b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sdm021nu02s-datasheet.pdf)