# SDH8595AE

**Hangzhou Silan Microelectronics** · AC-DC Controllers And Regulators · DIP-8-300mil

SDH8595AE from Hangzhou Silan Microelectronics, in a DIP-8-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | Supply pin: the IC starts when VCC rises to 18V (VST 16.5-19.5V), enters undervoltage lockout at 8.5V (VSP 7.5-9.5V), and VCC overvoltage protection acts at 28V (25.5-29.5V), with absolute maximum VCC of -0.3 to 29.5V. |
| 2 | NC | unconnected | Floating (no-connect) pin, listed as 悬空端 in the datasheet, so it is left unconnected. |
| 3 | FB | input | Feedback voltage input for constant-voltage control with a 3V threshold (VCV 2.90-3.10V), FB overvoltage protection at 3.6V (3.4-3.8V), FB undervoltage protection at 1.9V, and an input voltage range of -1 to 6V. |
| 4 | ISEN | input | Peak current sense input for the primary-side sense resistor, with a maximum current detection threshold of 580mV and a minimum of 160mV, and an input voltage range of -0.3 to 6V. |
| 5 | Drain | output | High-voltage MOSFET drain connection for the internal 650V power switch, with BVDSS of 650V and RDS(ON) listed as 3.7 in the datasheet's electrical table. |
| 6 | Drain | output | High-voltage MOSFET drain connection for the internal 650V power switch (pins 5 and 6 are both drain), with BVDSS of 650V and RDS(ON) listed as 3.7 in the datasheet's electrical table. |
| 7 | GND | power_in | Ground reference pin for the controller. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | DIP-8-300mil |
| Category | Power Management (PMIC) |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VCC supply voltage | VCC | -0.3 |  | 29.5 | V |  | 3 |
| Input pin voltage (pin 4, ISEN) | VI | -0.3 |  | 6 | V |  | 3 |
| Input pin voltage (pin 3, FB) | VI | -1 |  | 6 | V |  | 3 |
| Input current | IIN | -10 |  | 10 | mA |  | 3 |
| Operating junction temperature | TJ |  |  | 150 | C |  | 3 |
| Operating ambient temperature range | Tamb | -20 |  | 85 | C |  | 3 |
| ESD (human body model) | ESD |  |  | 2500 | V | Human body model | 3 |
| Start-up current | IST |  | 1 | 3 | µA | VCC=14V | 3 |
| Start-up voltage | VST | 16.5 | 18 | 19.5 | V |  | 3 |
| Shutdown voltage | VSP | 7.5 | 8.5 | 9.5 | V |  | 3 |
| VCC overvoltage protection voltage | Vccovp | 25.5 | 28 | 29.5 | V |  | 3 |
| Constant voltage threshold | VCV | 2.9 | 3 | 3.1 | V |  | 3 |
| FB overvoltage protection voltage | VFBOVP | 3.4 | 3.6 | 3.8 | V |  | 3 |
| Cable compensation current | ICOMP_CABLE | 39 | 43 | 47 | µA |  | 3 |
| Leading edge blanking time | TLEB | 0.4 | 0.5 | 0.6 | µs |  | 3 |
| MOSFET source-drain breakdown voltage | BVDSS | 650 |  |  | V |  | 3 |
| Charging current (high-voltage start-up) | IHVC |  | 1000 |  | µA | VCC=0V, VDrain=100V | 3 |
| Off-state leakage current (high-voltage start-up) | IHVS |  | 3 |  | µA | VCC=18V, VDrain=650V | 3 |
| Static operating current | IDD |  | 600 |  | µA | ISEN=0, FB=0 | 3 |
| VCC clamp voltage | VVCC_CLP |  | 30 |  | V | IVCC=10mA | 3 |
| FB undervoltage protection voltage | VFBUVP |  | 1.9 |  | V |  | 3 |
| Maximum current sense threshold | VISEN_MAX |  | 580 |  | mV |  | 3 |
| Minimum current sense threshold | VISEN_MIN |  | 160 |  | mV |  | 3 |
| Maximum on-time | TON_MAX |  | 20 |  | µs |  | 3 |
| Over-temperature protection threshold | TOTP |  | 150 |  | C |  | 3 |
| Over-temperature protection hysteresis | TOTP_hys |  | 30 |  | C |  | 3 |
| On-resistance | RDS(ON) |  | 3.7 |  |  |  | 3 |

## CAD (KiCad official)

- Symbol: `SDH8595AE`
- Footprint: `Package_DIP:DIP-8_W7.62mm`
- 3D model: DIP-8-300mil (KiCad packages3D, STEP)
- 3D model files: `sdh8595ae-etched.step` / `sdh8595ae-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sdh8595ae.step` / `sdh8595ae.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590918395766657024) (10 pp, sha256 `b992907cf45b5268`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sdh8595ae-datasheet.pdf)