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SD6835

Public Made by Adom

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Hangzhou Silan Microelectronics AC-DC Controllers & Regulators, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SD6835

Hangzhou Silan Microelectronics · AC-DC Controllers & Regulators · DIP-8

SD6835 from Hangzhou Silan Microelectronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin.
2 CS input Peak current sense pin; external resistor RCS sets the peak current limit as VCSMAX/RCS, with VCS limited to -0.3~2 V.
3 VCC power_in Power supply pin; start threshold 16 V typ, stop threshold 8.5 V typ, overvoltage protection at 24.5 V typ, absolute maximum 28 V.
4 FB bidirectional Feedback input pin (I/O); voltage range -0.3~7 V, overload shutdown at 4.3 V typ after 40 ms typ delay.
5 NC unconnected No connection; recommended to connect to the Drain pin for better heat dissipation.
6 Drain passive Drain of the internal high-voltage MOSFET (650 V min breakdown), shorted to pins 7 and 8.
7 Drain passive Drain of the internal high-voltage MOSFET (650 V min breakdown), shorted to pins 6 and 8.
8 Drain passive Drain of the internal high-voltage MOSFET (650 V min breakdown), shorted to pins 6 and 7.

Key specifications

Parameter Value
Manufacturer Hangzhou Silan Microelectronics
Package DIP-8
Category Power Management ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Gate Voltage VDGR 650 V RGS=1MΩ 2
Gate-Source Voltage VGS -30 30 V 2
Drain Current Pulse IDM 20 A Pulse width limited by max junction temperature 2
Continuous Drain Current ID 7 A Tamb=25°C 2
Single Pulse Avalanche Energy EAS 350 mJ L=51mH, TJ=25°C(start) 2
Power Supply Voltage VCC,MAX 28 V 2
Feedback input voltage VFB -0.3 7 V 2
Peak current sense voltage VCS -0.3 2 V 2
Allowable Power Dissipation PD 6.3 W 2
Ambient thermal resistance θja 77 °C/W 2
Surface thermal resistance θjc 20 °C/W 2
Operating Junction Temperature TJ 150 °C 2
Operating Temperature Range TORG -25 85 °C 2
Storage Temperature Range TSTG -55 150 °C 3
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=50µA 3
Zero Gate Voltage Drain Current IDSS 50 µA VDS=650V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 200 µA VDS=480V, VGS=0V Tamb=125°C 3
Static Drain-Source On Resistance RDS(ON) 1.1 1.6 2.1 Ω VGS=10V, ID=3A 3
Input Capacitance CISS 520 700 950 pF VGS=0V, VDS=25V, f=1MHz 3
Output Capacitance COSS 50 86 120 pF VGS=0V, VDS=25V, f=1MHz 3
Reverse Transfer Capacitance CRSS 1.8 3.5 6.5 pF VGS=0V, VDS=25V, f=1MHz 3
Turn On Delay Time TD(ON) 13 20 26 ns VDD=0.5BVDSS, ID=25mA 3
Rise Time TR 37 51 68 ns VDD=0.5BVDSS, ID=25mA 3
Turn Off Delay Time TD(OFF) 26 37 50 ns VDD=0.5BVDSS, ID=25mA 3
Fall Time TF 21 32 44 ns VDD=0.5BVDSS, ID=25mA 3
Start Threshold Voltage VSTART 14.5 16 17 V VCC=12V, Tamb=25°C 3
Stop Threshold Voltage VSTOP 7.5 8.5 9.5 V VCC=12V, Tamb=25°C 3
Max. Oscillate Frequency fOSCMAX 61 67 73 KHz VFB=3V 3
Min. Oscillate Frequency fOSCMIN 20 25 30 KHz VBURL<VFB<VBURH 3
Frequency jitter fMOD 1.5 2.5 3.5 KHz Oscillate frequency is the maximum; printed ± 3
Frequency Change With Temperature 5 10 % 25°C≤Tamb≤+85°C; printed ± 3
Maximum Duty cycle DMAX 72 77 82 % 3
MAX. Feedback Source Current IFBMAX 0.25 0.35 0.45 mA VFB=0V 3
Shutdown Feedback Voltage (over load protection) VSD 3.8 4.3 4.8 V 3
Shutdown Feedback Delay Time TSD 30 40 50 ms FB is increased to 5V from 0V instantly 4
Shutdown Delay Current IDELAY 3 6 9 µA VFB=5V 4
Max. value of CS VCSMAX 0.7 0.9 1.1 V 4
Peak current IOVER 2 2.2 2.4 A Maximum inductor current 4
Burst Mode High Voltage VBURH 0.4 0.5 0.6 V FB voltage 4
Burst Mode Low Voltage VBURL 0.25 0.35 0.45 V FB voltage 4
Overvoltage Protection VOVP 23 24.5 26 V VCC voltage 4
Over Temperature Protection TOTP 125 150 175 °C 4
Leading-edge Blanking Time TLEB 200 350 500 ns 4
Start Current ISTART 4 20 µA VCC increases from 0V to 12V 4
Quiescent Current ISTATIC 1 1.5 2 mA VCC=12V, VFB=0V 4
Operating Current IOP 1.2 2.2 3.2 mA VCC=12V, VFB=3V 4

CAD (KiCad official)

  • Symbol: SD6835
  • Footprint: Package_DIP:DIP-8_W7.62mm
  • 3D model: DIP-8 (KiCad packages3D, STEP)
  • 3D model files: sd6835-etched.step / sd6835-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sd6835.step / sd6835.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Silan Microelectronics datasheet (9 pp, sha256 69b5fa57b87bf1af, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF