component
SBT10L200CT
Public Made by Adomby adom
DIYI Elec Tech Schottky Diodes, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SBT10L200CT
DIYI Elec Tech · Schottky Diodes · TO-220AB-3
SBT10L200CT from DIYI Elec Tech, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (PIN 1); each diode is rated 5 A average, 200 V VRRM. |
| 2 | K | passive | Common cathode of both diodes (PIN 2), also connected to the case/tab; 10 A per device total. |
| 3 | A2 | passive | Anode of the second Schottky diode (PIN 3); each diode is rated 5 A average, 200 V VRRM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 200 | V | 1 | |||
| Maximum average forward rectified current per diode | IF(AV) | 10 | A | Per diode | 1 | ||
| Maximum average forward rectified current per device | IF(AV) | 5 | A | Per device | 1 | ||
| Peak forward surge current | IFSM | 150 | A | 8.3ms single half sine-wave superimposed on rated load, per diode | 1 | ||
| Maximum rms voltage | VRMS | 140 | V | 1 | |||
| Operating junction temperature range | TJ | -55 | 150 | °C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 1 | ||
| Breakdown voltage per diode | VBR | 100 | V | IR=0.5mA | 2 | ||
| Instantaneous forward voltage per diode | VF | 0.85 | V | IF=5A, TJ=25°C | 2 | ||
| Reverse current per diode | IR | 7.2 | A | VR=100V, TJ=25°C | 2 | ||
| Typical junction capacitance | CJ | 620 | pF | VR=4V, f=1MHz | 1 | ||
| Typical thermal resistance per diode | RJC | 15 | °C/W | Mounted on infinite heatsink (Note 1) | 1 | ||
| Instantaneous forward voltage per diode | VF | 0.59 | V | IF=1A, TJ=25°C | 2 | ||
| Instantaneous forward voltage per diode | VF | 0.68 | V | IF=2A, TJ=25°C | 2 | ||
| Instantaneous forward voltage per diode | VF | 0.79 | V | IF=5A, TJ=25°C | 2 | ||
| Instantaneous forward voltage per diode | VF | 0.52 | V | IF=1A, TJ=125°C | 2 | ||
| Instantaneous forward voltage per diode | VF | 0.63 | V | IF=2A, TJ=125°C | 2 | ||
| Instantaneous forward voltage per diode | VF | 0.73 | V | IF=5A, TJ=125°C | 2 | ||
| Reverse current per diode | IR | 10 | A | VR=70V | 2 | ||
| Reverse current per diode | IR | 50 | mA | VR=100V, TJ=125°C | 2 |
CAD (KiCad official)
- Symbol:
SBT10L200CT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
sbt10l200ct-etched.step/sbt10l200ct-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sbt10l200ct.step/sbt10l200ct.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DIYI Elec Tech datasheet (4 pp, sha256
5f7c2d18a19f3b98, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SBT10L200CT
**DIYI Elec Tech** · Schottky Diodes · TO-220AB-3
SBT10L200CT from DIYI Elec Tech, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (PIN 1); each diode is rated 5 A average, 200 V VRRM. |
| 2 | K | passive | Common cathode of both diodes (PIN 2), also connected to the case/tab; 10 A per device total. |
| 3 | A2 | passive | Anode of the second Schottky diode (PIN 3); each diode is rated 5 A average, 200 V VRRM. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DIYI Elec Tech |
| Package | TO-220AB-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | | | 200 | V | | 1 |
| Maximum average forward rectified current per diode | IF(AV) | | | 10 | A | Per diode | 1 |
| Maximum average forward rectified current per device | IF(AV) | | | 5 | A | Per device | 1 |
| Peak forward surge current | IFSM | | | 150 | A | 8.3ms single half sine-wave superimposed on rated load, per diode | 1 |
| Maximum rms voltage | VRMS | | | 140 | V | | 1 |
| Operating junction temperature range | TJ | -55 | | 150 | °C | | 1 |
| Storage temperature range | TSTG | -55 | | 150 | °C | | 1 |
| Breakdown voltage per diode | VBR | 100 | | | V | IR=0.5mA | 2 |
| Instantaneous forward voltage per diode | VF | | | 0.85 | V | IF=5A, TJ=25°C | 2 |
| Reverse current per diode | IR | | | 7.2 | A | VR=100V, TJ=25°C | 2 |
| Typical junction capacitance | CJ | | 620 | | pF | VR=4V, f=1MHz | 1 |
| Typical thermal resistance per diode | RJC | | 15 | | °C/W | Mounted on infinite heatsink (Note 1) | 1 |
| Instantaneous forward voltage per diode | VF | | 0.59 | | V | IF=1A, TJ=25°C | 2 |
| Instantaneous forward voltage per diode | VF | | 0.68 | | V | IF=2A, TJ=25°C | 2 |
| Instantaneous forward voltage per diode | VF | | 0.79 | | V | IF=5A, TJ=25°C | 2 |
| Instantaneous forward voltage per diode | VF | | 0.52 | | V | IF=1A, TJ=125°C | 2 |
| Instantaneous forward voltage per diode | VF | | 0.63 | | V | IF=2A, TJ=125°C | 2 |
| Instantaneous forward voltage per diode | VF | | 0.73 | | V | IF=5A, TJ=125°C | 2 |
| Reverse current per diode | IR | | 10 | | A | VR=70V | 2 |
| Reverse current per diode | IR | | 50 | | mA | VR=100V, TJ=125°C | 2 |
## CAD (KiCad official)
- Symbol: `SBT10L200CT`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `sbt10l200ct-etched.step` / `sbt10l200ct-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sbt10l200ct.step` / `sbt10l200ct.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [DIYI Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603047676863008768) (4 pp, sha256 `5f7c2d18a19f3b98`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sbt10l200ct-datasheet.pdf)