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SBDB20H150CTB
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Changjing Schottky Diodes, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SBDB20H150CTB
Changjing · Schottky Diodes · TO-263-2L
SBDB20H150CTB from Changjing, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the 150 V Schottky barrier rectifier; the device is rated for 20 A average rectified output current (2×10 A) with a junction temperature up to 175 ℃. |
| 2 | CATHODE | passive | Cathode of the Schottky barrier rectifier, with a storage temperature range of -55 to +175 ℃ and a junction temperature rating of 175 ℃. |
| 3 | ANODE | passive | Second anode of the Schottky barrier rectifier, rated with the same 150 V peak repetitive reverse voltage and 20 A average rectified output current as the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-263-2L |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak repetitive reverse voltage | VRRM | 150 | V | 1 | |||
| Average rectified output current | IO | 20 | A | 1 | |||
| Storage temperature | Tstg | -55 | 175 | ℃ | 1 | ||
| Junction temperature | Tj | 175 | ℃ | 1 | |||
| Thermal resistance from junction to ambient | RΘJA | 62.5 | ℃/W | 1 | |||
| Thermal resistance from junction to case | RΘJC | 2 | ℃/W | Tc=25℃ | 1 |
CAD (KiCad official)
- Symbol:
SBDB20H150CTB - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
sbdb20h150ctb-etched.step/sbdb20h150ctb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sbdb20h150ctb.step/sbdb20h150ctb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (3 pp, sha256
181c506148133e59, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SBDB20H150CTB
**Changjing** · Schottky Diodes · TO-263-2L
SBDB20H150CTB from Changjing, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the 150 V Schottky barrier rectifier; the device is rated for 20 A average rectified output current (2×10 A) with a junction temperature up to 175 ℃. |
| 2 | CATHODE | passive | Cathode of the Schottky barrier rectifier, with a storage temperature range of -55 to +175 ℃ and a junction temperature rating of 175 ℃. |
| 3 | ANODE | passive | Second anode of the Schottky barrier rectifier, rated with the same 150 V peak repetitive reverse voltage and 20 A average rectified output current as the device. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-263-2L |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak repetitive reverse voltage | VRRM | | | 150 | V | | 1 |
| Average rectified output current | IO | | | 20 | A | | 1 |
| Storage temperature | Tstg | -55 | | 175 | ℃ | | 1 |
| Junction temperature | Tj | | | 175 | ℃ | | 1 |
| Thermal resistance from junction to ambient | RΘJA | | 62.5 | | ℃/W | | 1 |
| Thermal resistance from junction to case | RΘJC | | 2 | | ℃/W | Tc=25℃ | 1 |
## CAD (KiCad official)
- Symbol: `SBDB20H150CTB`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files: `sbdb20h150ctb-etched.step` / `sbdb20h150ctb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sbdb20h150ctb.step` / `sbdb20h150ctb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078342560268288) (3 pp, sha256 `181c506148133e59`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sbdb20h150ctb-datasheet.pdf)