component
SBD20C200T
Public Made by Adomby adom
Hangzhou Silan Microelectronics Schottky Barrier Diodes (SBD), TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SBD20C200T
Hangzhou Silan Microelectronics · Schottky Barrier Diodes (SBD) · TO-220-3L
SBD20C200T from Hangzhou Silan Microelectronics, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (阳极), one half of the common-cathode dual; rated 200 V VRRM and 20 A total IFAV per device. |
| 2 | K | passive | Common cathode (共阴极) of both diodes, also connected to the mounting tab. |
| 3 | A2 | passive | Anode of the second Schottky diode (阳极), the other half of the common-cathode dual; rated 200 V VRRM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220-3L |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage drop | VF | 0.92 | V | IF=10A (TC=25°C) | 1 | ||
| Forward voltage drop | VF | 0.8 | V | IF=10A (TC=125°C) | 1 | ||
| Reverse leakage current | IR | 10 | µA | VR=200V (TC=25°C) | 1 | ||
| Reverse leakage current | IR | 10 | mA | VR=200V (TC=125°C) | 1 | ||
| Maximum repetitive peak reverse voltage | VRRM | 200 | V | TC=25°C | 1 | ||
| Average forward rectified current | IFAV | 20 | A | TC=25°C | 1 | ||
| Peak forward surge current | IFSM | 150 | A | 8.3ms, TC=25°C | 1 | ||
| Operating junction temperature | TJ | 150 | °C | TC=25°C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction to case | RθJC | 1.6 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SBD20C200T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
sbd20c200t-etched.step/sbd20c200t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sbd20c200t.step/sbd20c200t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (5 pp, sha256
93be202dc3db491e, retrieved 2026-10-23, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SBD20C200T
**Hangzhou Silan Microelectronics** · Schottky Barrier Diodes (SBD) · TO-220-3L
SBD20C200T from Hangzhou Silan Microelectronics, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (阳极), one half of the common-cathode dual; rated 200 V VRRM and 20 A total IFAV per device. |
| 2 | K | passive | Common cathode (共阴极) of both diodes, also connected to the mounting tab. |
| 3 | A2 | passive | Anode of the second Schottky diode (阳极), the other half of the common-cathode dual; rated 200 V VRRM. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220-3L |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage drop | VF | | | 0.92 | V | IF=10A (TC=25°C) | 1 |
| Forward voltage drop | VF | | | 0.8 | V | IF=10A (TC=125°C) | 1 |
| Reverse leakage current | IR | | | 10 | µA | VR=200V (TC=25°C) | 1 |
| Reverse leakage current | IR | | | 10 | mA | VR=200V (TC=125°C) | 1 |
| Maximum repetitive peak reverse voltage | VRRM | | | 200 | V | TC=25°C | 1 |
| Average forward rectified current | IFAV | | | 20 | A | TC=25°C | 1 |
| Peak forward surge current | IFSM | | | 150 | A | 8.3ms, TC=25°C | 1 |
| Operating junction temperature | TJ | | | 150 | °C | TC=25°C | 1 |
| Storage temperature range | TSTG | -55 | | 150 | °C | | 1 |
| Thermal resistance, junction to case | RθJC | | | 1.6 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `SBD20C200T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files: `sbd20c200t-etched.step` / `sbd20c200t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sbd20c200t.step` / `sbd20c200t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](docs/sbd20c200t-datasheet.pdf) (5 pp, sha256 `93be202dc3db491e`, retrieved 2026-10-23, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sbd20c200t-datasheet.pdf)