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SBD10C150F
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Hangzhou Silan Microelectronics Schottky Diodes, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SBD10C150F
Hangzhou Silan Microelectronics · Schottky Diodes · TO-220F-3
SBD10C150F from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode; the common-cathode pair is rated VRRM 150 V and IFAV 10 A. |
| 2 | K | passive | Common cathode of both Schottky diodes (center pin); the package diagram marks it as 共阴极, common cathode. |
| 3 | A2 | passive | Anode of the second Schottky diode; the common-cathode pair is rated VRRM 150 V and IFAV 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 0.9 | V | IF=5A, TC=25C | 2 | ||
| Forward voltage | VF | 0.75 | V | IF=5A, TC=125C | 2 | ||
| Reverse leakage current | IR | 50 | μA | VR=150V, TC=25C | 2 | ||
| Reverse leakage current | IR | 25 | mA | VR=150V, TC=125C | 2 | ||
| Maximum repetitive reverse voltage | VRRM | 150 | V | TC=25C unless otherwise specified | 1 | ||
| Average forward rectified current | IFAV | 10 | A | TC=25C unless otherwise specified | 1 | ||
| Forward peak surge current | IFSM | 120 | A | 8.3ms; TC=25C unless otherwise specified | 1 | ||
| Operating junction temperature range | TJ | -55 | 150 | C | Note 1 (avoid thermal runaway); TC=25C unless otherwise specified | 1 | |
| Storage temperature range | TSTG | -55 | 150 | C | TC=25C unless otherwise specified | 1 |
CAD (KiCad official)
- Symbol:
SBD10C150F - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (6 pp, sha256
945bfd976e98e3d7, retrieved 2026-10-14, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SBD10C150F
**Hangzhou Silan Microelectronics** · Schottky Diodes · TO-220F-3
SBD10C150F from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode; the common-cathode pair is rated VRRM 150 V and IFAV 10 A. |
| 2 | K | passive | Common cathode of both Schottky diodes (center pin); the package diagram marks it as 共阴极, common cathode. |
| 3 | A2 | passive | Anode of the second Schottky diode; the common-cathode pair is rated VRRM 150 V and IFAV 10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | | | 0.9 | V | IF=5A, TC=25C | 2 |
| Forward voltage | VF | | | 0.75 | V | IF=5A, TC=125C | 2 |
| Reverse leakage current | IR | | | 50 | μA | VR=150V, TC=25C | 2 |
| Reverse leakage current | IR | | | 25 | mA | VR=150V, TC=125C | 2 |
| Maximum repetitive reverse voltage | VRRM | | | 150 | V | TC=25C unless otherwise specified | 1 |
| Average forward rectified current | IFAV | | | 10 | A | TC=25C unless otherwise specified | 1 |
| Forward peak surge current | IFSM | | | 120 | A | 8.3ms; TC=25C unless otherwise specified | 1 |
| Operating junction temperature range | TJ | -55 | | 150 | C | Note 1 (avoid thermal runaway); TC=25C unless otherwise specified | 1 |
| Storage temperature range | TSTG | -55 | | 150 | C | TC=25C unless otherwise specified | 1 |
## CAD (KiCad official)
- Symbol: `SBD10C150F`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588888768467755008) (6 pp, sha256 `945bfd976e98e3d7`, retrieved 2026-10-14, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sbd10c150f-datasheet.pdf)