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SBCW66GLT1G

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onsemi Bipolar Transistors - BJT, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SBCW66GLT1G

onsemi · Bipolar Transistors - BJT · SOT-23-3

SBCW66GLT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor, with emitter-base voltage limited to VEBO 5.0 Vdc maximum.
2 EMITTER passive Emitter terminal of the NPN transistor, rated with emitter-base voltage VEBO 5.0 Vdc and continuous collector current IC 800 mAdc maximum.
3 COLLECTOR passive Collector terminal of the NPN transistor, rated with collector-emitter voltage VCEO 45 Vdc and continuous collector current IC 800 mAdc maximum.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 45 Vdc IC = 10 mAdc, IB = 0 2
Collector-Emitter Breakdown Voltage V(BR)CES 75 Vdc IC = 10 Adc, VEB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current ICES 20 nAdc VCE = 45 Vdc, IE = 0 2
Collector Cutoff Current ICES 20 Adc VCE = 45 Vdc, IE = 0, TA = 150 C 2
Emitter Cutoff Current IEBO 20 nAdc VEB = 4.0 Vdc, IC = 0 2
DC Current Gain hFE 50 IC = 100 Adc, VCE = 10 Vdc 2
DC Current Gain hFE 110 IC = 10 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 160 400 IC = 100 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 60 IC = 500 mAdc, VCE = 2.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.7 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.3 Vdc IC = 100 mAdc, IB = 10 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 2 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Current-Gain Bandwidth Product fT 100 MHz IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz 2
Output Capacitance Cobo 12 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 80 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Noise Figure NF 10 dB VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz 2
Turn-On Time ton 100 ns IB1 = IB2 = 15 mAdc 2
Turn-Off Time toff 400 ns IC = 150 mAdc, RL = 150 2
Collector-Emitter Voltage VCEO 45 Vdc 1
Collector-Base Voltage VCBO 75 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 800 mAdc 1
Collector Current - Pulsed IC 1200 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25 C 1
Thermal Resistance, Junction-to-Ambient FR-5 Board RJA 556 C/W FR-5 board 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25 C 1
Thermal Resistance, Junction-to-Ambient Alumina Substrate RJA 417 C/W Alumina substrate 1
Junction and Storage Temperature TJ, Tstg -55 150 C 1

CAD (KiCad official)

  • Symbol: SBCW66GLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: sbcw66glt1g-etched.step / sbcw66glt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbcw66glt1g.step / sbcw66glt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 0542ce442c82685f, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF