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SBC857CLT1G

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onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SBC857CLT1G

onsemi · Bipolar Transistors - BJT · SOT-23

SBC857CLT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor; emitter-base voltage rating VEBO is −5.0 V.
2 EMITTER passive Emitter of the PNP transistor; VEBO is −5.0 V maximum relative to the base.
3 COLLECTOR passive Collector of the PNP transistor; SBC857 ratings are VCEO −45 V, VCBO −50 V, and IC −100 mAdc continuous (−200 mAdc peak).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -45 V BC857, SBC857 1
Collector-Base Voltage VCBO -50 V BC857, SBC857 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -100 mAdc 1
Collector Current - Peak IC -200 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C, FR-5 board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, alumina substrate (Note 2) 1
Thermal Resistance, Junction-to-Ambient (FR-5) RθJA 556 °C/W FR-5 board 1
Thermal Resistance, Junction-to-Ambient (Alumina) RθJA 417 °C/W Alumina substrate 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC = -10 mA, BC857/SBC857 Series 2
Collector-Base Breakdown Voltage V(BR)CBO -50 V IC = -10 µA, BC857/SBC857 Series 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 µA, BC857/SBC857 Series 2
Collector Cutoff Current ICBO -15 nA VCB = -30 V 2
Collector Cutoff Current ICBO -4 µA VCB = -30 V, TA = 150°C 2
DC Current Gain hFE 420 520 800 IC = -2.0 mA, VCE = -5.0 V, C grade 2
DC Current Gain hFE 270 IC = -10 µA, VCE = -5.0 V, C grade 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter On Voltage VBE(on) -0.6 -0.75 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter On Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 2
Current-Gain - Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 2

CAD (KiCad official)

  • Symbol: SBC857CLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sbc857clt1g-etched.step / sbc857clt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbc857clt1g.step / sbc857clt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 3f39a541be211016, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF