# SBC856ALT1G-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

SBC856ALT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base of the PNP transistor; emitter-base breakdown voltage VEBO is -5 V and DC current gain hFE is 125 to 250 at VCE=-5V, IC=-2mA. |
| 2 | E | passive | Emitter of the PNP transistor; the emitter-base voltage is limited to -5 V. |
| 3 | C | passive | Collector of the PNP transistor; continuous collector current is -0.1 A, collector-emitter voltage is 65 V and collector power dissipation is 200 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `SBC856ALT1G-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sbc856alt1g-hxy-etched.step` / `sbc856alt1g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sbc856alt1g-hxy.step` / `sbc856alt1g-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/sbc856alt1g-hxy-datasheet.pdf) (4 pp, sha256 `c0fd06e903a5bb5d`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sbc856alt1g-hxy-datasheet.pdf)