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Contents

README

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SBC846BLT3G

onsemi · Bipolar (BJT) · SOT-23

SBC846BLT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet gives a maximum emitter-base voltage VEBO of 6.0 V for the BC846 family and a maximum continuous collector current IC of 100 mA.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives a maximum collector-emitter voltage VCEO of 65 V for the BC846 family.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet gives a maximum collector-base voltage VCBO of 80 V and a maximum continuous collector current IC of 100 mA for the BC846 family.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 65 V IC = 10 mA (BC846A, B, C) 3
Collector-Emitter Breakdown Voltage V(BR)CES 80 V IC = 10 μA, VEB = 0 (BC846A, B, C) 3
Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 10 μA (BC846A, B, C) 3
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 1.0 μA (BC846A, B, C) 3
Collector Cutoff Current ICBO 15 nA VCB = 30 V 3
Collector Cutoff Current ICBO 5 μA VCB = 30 V, TA = 150°C 3
DC Current Gain (BC846B) hFE 200 290 450 IC = 2.0 mA, VCE = 5.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.7 V IC = 10 mA, IB = 0.5 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC = 100 mA, IB = 5.0 mA 3
Base-Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 3
Base-Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 3
Current-Gain - Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 3
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 3
Noise Figure NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz (BC846A, B, C) 3
Collector-Emitter Voltage VCEO 65 Vdc BC846 column 2
Collector-Base Voltage VCBO 80 Vdc BC846 column 2
Emitter-Base Voltage VEBO 6 Vdc BC846 column 2
Collector Current - Continuous IC 100 mAdc 2
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 2
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C (FR-5 board, Note 1); derate 1.8 mW/°C above 25°C 2
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C (Alumina substrate, Note 2); derate 2.4 mW/°C above 25°C 2
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W Note 1 (FR-5 board) 2
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Note 2 (alumina substrate) 2

CAD (KiCad official)

  • Symbol: SBC846BLT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sbc846blt3g-etched.step / sbc846blt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbc846blt3g.step / sbc846blt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (15 pp, sha256 dc9c3434718ea77b, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF