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SBC817-40LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SBC817-40LT1G

onsemi · Bipolar (BJT) · SOT-23

SBC817-40LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet gives no base-pin-specific limit, only device maxima of VEBO 5.0 V and 500 mA continuous collector current.
2 EMITTER passive Emitter terminal of the NPN transistor; the device emitter-base rating is VEBO 5.0 V with 500 mA maximum continuous collector current.
3 COLLECTOR passive Collector terminal of the NPN transistor, rated for VCEO 45 V, VCBO 50 V, and 500 mA continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC = 10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES 50 V VEB = 0, IC = 10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 1.0 A 2
Collector Cutoff Current ICBO 100 nA VCB = 20 V 2
Collector Cutoff Current ICBO 5 A VCB = 20 V, TA = 150°C 2
DC Current Gain (BC817-40, SBC817-40 variant) hFE 250 600 IC = 100 mA, VCE = 1.0 V 2
DC Current Gain hFE 40 IC = 500 mA, VCE = 1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC = 500 mA, IB = 50 mA 2
Base-Emitter On Voltage VBE(on) 1.2 V IC = 500 mA, VCE = 1.0 V 2
Current-Gain-Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Collector-Emitter Voltage VCEO 45 V 1
Collector-Base Voltage VCBO 50 V 1
Emitter-Base Voltage VEBO 5 V 1
Collector Current - Continuous IC 500 mAdc 1
Total Device Dissipation, FR-5 Board PD 225 mW TA = 25°C (Note 1, FR-5 board); derate 1.8 mW/°C above 25°C 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA = 25°C (Note 2, alumina substrate); derate 2.4 mW/°C above 25°C 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W Note 1, FR-5 board 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Note 2, alumina substrate 1
Junction and Storage Temperature TJ, Tstg -65 150 °C 1

CAD (KiCad official)

  • Symbol: SBC817-40LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sbc817-40lt1g-etched.step / sbc817-40lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbc817-40lt1g.step / sbc817-40lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 b9e8d1b3c61a1696, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF