component
SBC817-16LT3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
sbc817-16lt3g: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+262−1
README.md+26@@ -21,6 +21,32 @@ SBC817-16LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted fr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Voltage | VCEO | | | 45 | V | | 2 |+| Collector-Base Voltage | VCBO | | | 50 | V | | 2 |+| Emitter-Base Voltage | VEBO | | | 5 | V | | 2 |+| Collector Current - Continuous | IC | | | 500 | mAdc | | 2 |+| Junction and Storage Temperature | TJ, Tstg | -65 | | 150 | °C | | 2 |+| Total Device Dissipation (FR-5 Board) | PD | | | 225 | mW | FR-5 board (Note 1), TA = 25°C | 2 |+| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | | | 556 | °C/W | FR-5 board (Note 1) | 2 |+| Total Device Dissipation (Alumina Substrate) | PD | | | 300 | mW | Alumina substrate (Note 2), TA = 25°C | 2 |+| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | | | 417 | °C/W | Alumina substrate (Note 2) | 2 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | | | V | IC = 10 mA | 3 |+| Collector-Emitter Breakdown Voltage | V(BR)CES | 50 | | | V | VEB = 0, IC = 10 A | 3 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | | | V | IE = 1.0 A | 3 |+| Collector Cutoff Current | ICBO | | | 100 | nA | VCB = 20 V | 3 |+| Collector Cutoff Current | ICBO | | | 5 | A | VCB = 20 V, TA = 150°C | 3 |+| DC Current Gain (BC817-16 / SBC817-16) | hFE | 100 | | 250 | | IC = 100 mA, VCE = 1.0 V | 3 |+| DC Current Gain (BC817-16 / SBC817-16) | hFE | 40 | | | | IC = 500 mA, VCE = 1.0 V | 3 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.7 | V | IC = 500 mA, IB = 50 mA | 3 |+| Base-Emitter On Voltage | VBE(on) | | | 1.2 | V | IC = 500 mA, VCE = 1.0 V | 3 |+| Current-Gain - Bandwidth Product | fT | 100 | | | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 3 |+ ## CAD (KiCad official) - Symbol: `SBC817-16LT3G`
page.json+236−1@@ -150,6 +150,241 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "47b7aaca8e284f0d",+ "rows": [+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (FR-5 Board)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 board (Note 1), TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (FR-5 Board)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 board (Note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (Alumina Substrate)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina substrate (Note 2), TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (Alumina Substrate)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina substrate (Note 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 45,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "VEB = 0, IC = 10 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE = 1.0 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB = 20 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VCB = 20 V, TA = 150°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain (BC817-16 / SBC817-16)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 100,+ "typ": null,+ "max": 250,+ "conditions": "IC = 100 mA, VCE = 1.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain (BC817-16 / SBC817-16)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC = 500 mA, VCE = 1.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.7,+ "conditions": "IC = 500 mA, IB = 50 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "IC = 500 mA, VCE = 1.0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain - Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +426,4 @@ "visibility": { "public": true }-}+}