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SBC817-16LT3G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SBC817-16LT3G

onsemi · Bipolar (BJT) · SOT-23

SBC817-16LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the emitter-base voltage rating VEBO is 5.0 V maximum.
2 EMITTER passive Emitter terminal of the NPN transistor; the collector-emitter voltage rating VCEO is 45 V and the continuous collector current IC is 500 mA maximum.
3 COLLECTOR passive Collector terminal of the NPN transistor; the collector-base voltage rating VCBO is 50 V and the continuous collector current IC is 500 mA maximum.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 45 V 2
Collector-Base Voltage VCBO 50 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current - Continuous IC 500 mAdc 2
Junction and Storage Temperature TJ, Tstg -65 150 °C 2
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 board (Note 1), TA = 25°C 2
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W FR-5 board (Note 1) 2
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina substrate (Note 2), TA = 25°C 2
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina substrate (Note 2) 2
Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC = 10 mA 3
Collector-Emitter Breakdown Voltage V(BR)CES 50 V VEB = 0, IC = 10 A 3
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 1.0 A 3
Collector Cutoff Current ICBO 100 nA VCB = 20 V 3
Collector Cutoff Current ICBO 5 A VCB = 20 V, TA = 150°C 3
DC Current Gain (BC817-16 / SBC817-16) hFE 100 250 IC = 100 mA, VCE = 1.0 V 3
DC Current Gain (BC817-16 / SBC817-16) hFE 40 IC = 500 mA, VCE = 1.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC = 500 mA, IB = 50 mA 3
Base-Emitter On Voltage VBE(on) 1.2 V IC = 500 mA, VCE = 1.0 V 3
Current-Gain - Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 3

CAD (KiCad official)

  • Symbol: SBC817-16LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sbc817-16lt3g-etched.step / sbc817-16lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbc817-16lt3g.step / sbc817-16lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 47b7aaca8e284f0d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF