component
SBAT54T1G
Public Made by Adomby adom
onsemi Schottky Barrier Diodes (SBD), SOD-123. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSBAT54T1G
onsemi · Schottky Barrier Diodes (SBD) · SOD-123
SBAT54T1G from onsemi, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode of the 30 V Schottky barrier diode (Style 1, SOD-123 Case 425). |
| 2 | ANODE | passive | Anode of the 30 V Schottky barrier diode (Style 1, SOD-123 Case 425); forward current up to 200 mA DC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | V(BR)R | 30 | V | IR = 10 A | 2 | ||
| Total Capacitance | CT | 7.6 | 10 | pF | VR = 1.0 V, f = 1.0 MHz | 2 | |
| Reverse Leakage | IR | 0.5 | 2 | Adc | VR = 25 V | 2 | |
| Forward Voltage | VF | 0.22 | 0.24 | Vdc | IF = 0.1 mAdc | 2 | |
| Forward Voltage | VF | 0.29 | 0.32 | Vdc | IF = 1.0 mAdc | 2 | |
| Forward Voltage | VF | 0.35 | 0.4 | Vdc | IF = 10 mAdc | 2 | |
| Forward Voltage | VF | 0.41 | 0.5 | Vdc | IF = 30 mAdc | 2 | |
| Forward Voltage | VF | 0.52 | 0.8 | Vdc | IF = 100 mAdc | 2 | |
| Reverse Recovery Time | trr | 5 | ns | IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1 | 2 | ||
| Reverse Voltage | VR | 30 | V | TJ = 125°C | 1 | ||
| Forward Power Dissipation, FR-5 Board | PF | 400 | mW | TA = 25°C | 1 | ||
| Power Derating above 25°C | PF | 3.2 | mW/°C | Derate above 25°C | 1 | ||
| Forward Current (DC) | IF | 200 | mA | 1 | |||
| Non-Repetitive Peak Forward Current | IFSM | 600 | mA | tp < 10 msec | 1 | ||
| Repetitive Peak Forward Current | IFRM | 300 | mA | Pulse Wave = 1 sec, Duty Cycle = 66% | 1 | ||
| Junction Temperature | TJ | -55 | 125 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RJL | 174 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 492 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SBAT54T1G - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files:
sbat54t1g-etched.step/sbat54t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sbat54t1g.step/sbat54t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
1f463eab2ea19e9b, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).