component
SBAS70-04LT1G
Public Made by Adomby adom
onsemi Schottky Diodes, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
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| viewers | 10d ago |
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| page.json | 10d ago |
| README.md | 10d ago |
| sbas70-04lt1g-etched.glb | 10d ago |
| sbas70-04lt1g-etched.step | 10d ago |
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| sbas70-04lt1g-hero.overlay.json | 10d ago |
| sbas70-04lt1g.glb | 10d ago |
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| sbas70-04lt1g.step | 10d ago |
SBAS70-04LT1G
onsemi · Schottky Diodes · SOT-23-3
SBAS70-04LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode terminal of the Schottky barrier diode; the device is rated for a forward current IF of 70 mA and a non-repetitive peak forward surge current IFSM of 100 mA (t ≤ 1.0 s). |
| 2 | CATHODE | passive | Cathode terminal of the Schottky barrier diode; the device has a maximum reverse voltage VR of 70 V. |
| 3 | CATHODE/ANODE | passive | Combined CATHODE−ANODE terminal (Style 11) shared by the device's diode elements; it is not a single-function pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | V(BR)R | 70 | V | IR = 10 μA | 2 | ||
| Total Capacitance | CT | 2 | pF | VR = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Leakage | IR | 0.1 | A | VR = 50 V | 2 | ||
| Reverse Leakage | IR | 10 | A | VR = 70 V | 2 | ||
| Forward Voltage | VF | 410 | mV | IF = 1.0 mA | 2 | ||
| Forward Voltage | VF | 750 | mV | IF = 10 mA | 2 | ||
| Forward Voltage | VF | 1000 | mV | IF = 15 mA | 2 | ||
| Forward Current | IF | 70 | mA | 1 | |||
| Non-Repetitive Peak Forward Surge Current | IFSM | 100 | mA | t ≤ 1.0 s | 1 | ||
| Reverse Voltage | VR | 70 | V | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Forward Power Dissipation | PF | 225 | mW | TA = 25°C | 1 | ||
| Forward Power Dissipation Derating | PF | 1.8 | mW/°C | Derate above 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 508 | °C/W | FR-4 @ minimum pad (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 311 | °C/W | FR-4 @ 1.0 x 1.0 in pad (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
SBAS70-04LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
sbas70-04lt1g-etched.step/sbas70-04lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sbas70-04lt1g.step/sbas70-04lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (4 pp, sha256
d3a8befb507f2d67, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).