component
SBAS16HT3G
Public Made by Adomby adom
onsemi Switching Diodes, SOD-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3d ago |
| viewers | 3d ago |
| package.json | 3d ago |
| page.json | 3d ago |
| README.md | 3d ago |
| sbas16ht3g-etched.glb | 3d ago |
| sbas16ht3g-etched.step | 3d ago |
| sbas16ht3g-hero.glb | 3d ago |
| sbas16ht3g-hero.overlay.json | 3d ago |
| sbas16ht3g.glb | 3d ago |
| sbas16ht3g.kicad_mod | 3d ago |
| sbas16ht3g.kicad_sym | 3d ago |
| sbas16ht3g.lbr | 3d ago |
| sbas16ht3g.step | 3d ago |
SBAS16HT3G
onsemi · Switching Diodes · SOD-323
SBAS16HT3G from onsemi, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode terminal, identified by the polarity band on the SOD-323 package (Style 1). |
| 2 | ANODE | passive | Anode terminal of the switching diode, with a continuous reverse voltage rating of 100 V and a peak forward current of 200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Voltage Leakage Current (VR = 100 Vdc) | IR | 1 | Adc | VR = 100 Vdc | 3 | ||
| Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C) | IR | 50 | Adc | VR = 75 Vdc, TJ = 150°C | 3 | ||
| Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) | IR | 30 | Adc | VR = 25 Vdc, TJ = 150°C | 3 | ||
| Reverse Breakdown Voltage | V(BR) | 100 | Vdc | IBR = 100 Adc | 3 | ||
| Forward Voltage | VF | 715 | mV | IF = 1.0 mAdc | 3 | ||
| Forward Voltage | VF | 855 | mV | IF = 10 mAdc | 3 | ||
| Forward Voltage | VF | 1000 | mV | IF = 50 mAdc | 3 | ||
| Forward Voltage | VF | 1250 | mV | IF = 150 mAdc | 3 | ||
| Diode Capacitance | CD | 2 | pF | VR = 0, f = 1.0 MHz | 3 | ||
| Forward Recovery Voltage | VFR | 1.75 | Vdc | IF = 10 mAdc, tr = 20 ns | 3 | ||
| Reverse Recovery Time | trr | 6 | ns | IF = IR = 10 mAdc, RL = 50 | 3 | ||
| Stored Charge | QS | 45 | pC | IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 | 3 | ||
| Continuous Reverse Voltage | VR | 100 | V | 2 | |||
| Peak Forward Current | IF | 200 | mA | 2 | |||
| Non-Repetitive Peak Forward Surge Current | IFSM(surge) | 1.8 | A | 60 Hz | 2 | ||
| Repetitive Peak Forward Current | IFRM | 1 | A | Note 2: Square Wave, f = 40 kHz, PW = 200 ns | 2 | ||
| Non-Repetitive Peak Forward Current (square wave, TJ = 25°C prior to surge) | IFSM | 36 | A | t = 1 s (printed label; see review) | 2 | ||
| Non-Repetitive Peak Forward Current (square wave, TJ = 25°C prior to surge) | IFSM | 18 | A | t = 10 s (printed label; see review) | 2 | ||
| Non-Repetitive Peak Forward Current (square wave, TJ = 25°C prior to surge) | IFSM | 6 | A | t = 100 s (printed label; see review) | 2 | ||
| Non-Repetitive Peak Forward Current (square wave, TJ = 25°C prior to surge) | IFSM | 3 | A | t = 1 ms (printed label; see review) | 2 | ||
| Non-Repetitive Peak Forward Current (square wave, TJ = 25°C prior to surge) | IFSM | 1.8 | A | t = 10 ms (printed label; see review) | 2 | ||
| Non-Repetitive Peak Forward Current (square wave, TJ = 25°C prior to surge) | IFSM | 1.3 | A | t = 100 ms (printed label; see review) | 2 | ||
| Non-Repetitive Peak Forward Current (square wave, TJ = 25°C prior to surge) | IFSM | 1 | A | t = 1 s (second label; see review) | 2 | ||
| Total Device Dissipation FR-5 Board | PD | 200 | mW | TA = 25°C, Note 1: FR-4 minimum pad | 2 | ||
| Derate above 25°C (Total Device Dissipation) | 1.57 | mW/°C | Derate above 25°C | 2 | |||
| Thermal Resistance Junction to Ambient | RJA | 635 | °C/W | 2 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SBAS16HT3G - Footprint:
Diode_SMD:D_SOD-323 - 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files:
sbas16ht3g-etched.step/sbas16ht3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sbas16ht3g.step/sbas16ht3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
8ae62c3baae3879c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).