component

SBAS16HT1G

Public Made by Adom

by adom

onsemi Switching Diodes, SOD-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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SBAS16HT1G

onsemi · Switching Diodes · SOD-323

SBAS16HT1G from onsemi, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode (polarity band side) of the switching diode; continuous reverse voltage VR is rated 100 V and peak forward current IF 200 mA.
2 ANODE passive Anode of the switching diode; forward voltage is at most 1250 mV at IF = 150 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOD-323
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Reverse Voltage VR 100 V 1
Peak Forward Current IF 200 mA 1
Non-Repetitive Peak Forward Surge Current IFSM(surge) 1.8 A 60 Hz 1
Repetitive Peak Forward Current IFRM 1 A Square Wave, f = 40 kHz, PW = 200 ns, Test Duration = 60 s, TJ = 25°C prior to surge 1
Total Device Dissipation FR-5 Board PD 200 mW TA = 25°C 1
Derate above 25°C PD 1.57 mW/°C 1
Thermal Resistance Junction to Ambient RθJA 635 °C/W FR-4 Minimum Pad 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Reverse Leakage Current IR 1 µAdc VR = 100 Vdc 2
Reverse Leakage Current IR 50 µAdc VR = 75 Vdc, TJ = 150°C 2
Reverse Leakage Current IR 30 µAdc VR = 25 Vdc, TJ = 150°C 2
Reverse Breakdown Voltage V(BR) 100 Vdc IBR = 100 µAdc 2
Forward Voltage VF 715 mV IF = 1.0 mAdc 2
Forward Voltage VF 855 mV IF = 10 mAdc 2
Forward Voltage VF 1000 mV IF = 50 mAdc 2
Forward Voltage VF 1250 mV IF = 150 mAdc 2
Diode Capacitance CD 2 pF VR = 0, f = 1.0 MHz 2
Forward Recovery Voltage VFR 1.75 Vdc IF = 10 mAdc, tr = 20 ns 2
Reverse Recovery Time trr 6 ns IF = IR = 10 mAdc 2
Stored Charge QS 45 pC IF = 10 mAdc to VR = 5.0 Vdc 2

CAD (KiCad official)

  • Symbol: SBAS16HT1G
  • Footprint: Diode_SMD:D_SOD-323
  • 3D model: SOD-323 (KiCad packages3D, STEP)
  • 3D model files: sbas16ht1g-etched.step / sbas16ht1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbas16ht1g.step / sbas16ht1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 c08f2ae41053f15a, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF