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S9018-H

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Shandong Jingdao Microelectronics Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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S9018-H

Shandong Jingdao Microelectronics · Bipolar (BJT) · SOT-23

S9018-H from Shandong Jingdao Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet's emitter-base rating VEBO is 5.0 Vdc maximum, with emitter-base breakdown V(BR)EBO of at least 5.0 Vdc.
2 EMITTER passive Emitter terminal of the NPN transistor; emitter-base voltage VEBO is limited to 5.0 Vdc and emitter cut-off current IEBO is 0.1 uAdc maximum at VEB = 3 Vdc.
3 COLLECTOR passive Collector terminal of the NPN transistor; ratings are VCEO 15 Vdc, VCBO 30 Vdc and continuous collector current IC 50 mAdc, with total device dissipation PD 200 mW.

Key specifications

Parameter Value
Manufacturer Shandong Jingdao Microelectronics
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 15 Vdc 1
Collector-Base Voltage VCBO 30 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current, Continuous IC 50 mAdc 1
Total Device Dissipation PD 200 mW FR-5 Board, TA = 25°C 1
Junction and Storage Temperature TJ,Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage V(BR)CEO 15 Vdc IC = 1.0 mAdc, IB = 0 1
Collector-Base Breakdown Voltage V(BR)CBO 30 Vdc IC = 100 µAdc, IE = 0 1
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 100 µAdc, IC = 0 1
Collector cut-off current ICBO 0.05 uAdc VCB = 12 Vdc, IE = 0 1
Collector cut-off current ICEO 0.1 uAdc VCE = 12 Vdc, IB = 0 1
Emitter cut-off current IEBO 0.1 uAdc VEB = 3 Vdc, IC = 0 1
DC Current Gain hFE 70 200 IC = 1.0 mAdc, VCE = 5 Vdc 2
DC Current Gain, Rank H classification hFE 100 200 Rank H range as printed in classification of hFE 2
Collector-Emitter Saturation Voltage VCE(sat) 0.5 Vdc IC = 10 mAdc, IB = 1 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) 1.4 Vdc IC = 10 mAdc, IB = 1 mAdc 2
Current-Gain, Bandwidth Product fT 800 MHz IC = 5 mAdc, VCE = 5.0 Vdc, f = 400 MHz 2

CAD (KiCad official)

  • Symbol: S9018-H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s9018-h-etched.step / s9018-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s9018-h.step / s9018-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shandong Jingdao Microelectronics datasheet (5 pp, sha256 6b139ec7c71daf4a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF