component
S9014C331
Public Made by Adomby adom
ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| s9014c331-etched.glb | 13d ago |
| s9014c331-etched.step | 13d ago |
| s9014c331-hero.glb | 13d ago |
| s9014c331-hero.overlay.json | 13d ago |
| s9014c331.glb | 13d ago |
| s9014c331.kicad_mod | 13d ago |
| s9014c331.kicad_sym | 13d ago |
| s9014c331.lbr | 13d ago |
| s9014c331.step | 13d ago |
S9014C331
ALJ · Bipolar (BJT) · TO-92
S9014C331 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is rated 5 V minimum and VEBO is 5 V. |
| 2 | Base | passive | Base terminal of the NPN transistor; VBE(sat) is 1 V at IC = 100 mA, IB = 5 mA. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; ratings are VCBO 50 V, VCEO 45 V, and IC 100 mA, with PC 450 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V | 1 | |||
| Collector-emitter voltage | VCEO | 45 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current | IC | 100 | mA | 1 | |||
| Collector power dissipation | PC | 450 | mW | 1 | |||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 100µA, IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO* | 45 | V | IC = 1mA, IB = 0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100µA, IC = 0 | 1 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB = 50V, IE = 0 | 1 | ||
| Collector cut-off current | ICEO | 1 | μA | VCE = 35V, IB = 0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 1 | ||
| DC current gain | hFE | 60 | 1000 | VCE = 5V, IC = 1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC = 100mA, IB = 5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC = 100mA, IB = 5mA | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE = 5V, IC = 10mA, f = 30MHz | 1 |
CAD (KiCad official)
- Symbol:
S9014C331 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
s9014c331-etched.step/s9014c331-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s9014c331.step/s9014c331.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALJ datasheet (2 pp, sha256
ed82079a31adbb8c, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).