component
S8NC
Public Made by Adomby adom
FUXINSEMI Diodes - General Purpose, SMC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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S8NC
FUXINSEMI · Diodes - General Purpose · SMC
S8NC from FUXINSEMI, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode (color band end) of the 1200V, 8.0A general purpose rectifier; VRRM 1200V, VR 1200V. |
| 2 | A | passive | Anode of the 1200V, 8.0A general purpose rectifier; forward voltage 1.1V max at IF=8.0A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SMC |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 1200 | V | 1 | |||
| RMS voltage | VRMS | 840 | V | 1 | |||
| Continuous reverse voltage | VR | 1200 | V | 1 | |||
| Forward rectified current | IO | 8 | A | See Fig.1 | 1 | ||
| Forward surge current | IFSM | 200 | A | 8.3ms single half sine-wave (JEDEC method) | 1 | ||
| Maximum forward voltage | VF | 1.1 | V | IF=8.0A | 1 | ||
| Reverse current | IR | 5 | μA | VR=VRRM, TA=25°C | 1 | ||
| Reverse current | IR | 50 | μA | VR=VRRM, TA=100°C | 1 | ||
| Thermal resistance junction to ambient | RθJA | 10 | °C/W | Junction to ambient, P.C.B. mounted with 0.2x0.2in copper pad areas | 1 | ||
| Diode junction capacitance | CJ | 100 | pF | f=1MHz and applied 4V DC reverse voltage | 1 | ||
| Storage temperature | TSTG | -65 | 150 | °C | 1 | ||
| Operating temperature | TJ | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
S8NC - Footprint:
Diode_SMD:D_SMC - 3D model: SMC (KiCad packages3D, STEP)
- 3D model files:
s8nc-etched.step/s8nc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8nc.step/s8nc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FUXINSEMI datasheet (3 pp, sha256
4eab579ec9051b0e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# S8NC
**FUXINSEMI** · Diodes - General Purpose · SMC
S8NC from FUXINSEMI, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode (color band end) of the 1200V, 8.0A general purpose rectifier; VRRM 1200V, VR 1200V. |
| 2 | A | passive | Anode of the 1200V, 8.0A general purpose rectifier; forward voltage 1.1V max at IF=8.0A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | SMC |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 1200 | V | | 1 |
| RMS voltage | VRMS | | | 840 | V | | 1 |
| Continuous reverse voltage | VR | | | 1200 | V | | 1 |
| Forward rectified current | IO | | | 8 | A | See Fig.1 | 1 |
| Forward surge current | IFSM | | | 200 | A | 8.3ms single half sine-wave (JEDEC method) | 1 |
| Maximum forward voltage | VF | | | 1.1 | V | IF=8.0A | 1 |
| Reverse current | IR | | | 5 | μA | VR=VRRM, TA=25°C | 1 |
| Reverse current | IR | | | 50 | μA | VR=VRRM, TA=100°C | 1 |
| Thermal resistance junction to ambient | RθJA | | | 10 | °C/W | Junction to ambient, P.C.B. mounted with 0.2x0.2in copper pad areas | 1 |
| Diode junction capacitance | CJ | | 100 | | pF | f=1MHz and applied 4V DC reverse voltage | 1 |
| Storage temperature | TSTG | -65 | | 150 | °C | | 1 |
| Operating temperature | TJ | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `S8NC`
- Footprint: `Diode_SMD:D_SMC`
- 3D model: SMC (KiCad packages3D, STEP)
- 3D model files: `s8nc-etched.step` / `s8nc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s8nc.step` / `s8nc.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [FUXINSEMI datasheet](docs/s8nc-datasheet.pdf) (3 pp, sha256 `4eab579ec9051b0e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/s8nc-datasheet.pdf)