component
S8550T
Public Made by Adomby adom
Slkor SLKORMICRO Elec Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| s8550t-etched.glb | 17d ago |
| s8550t-etched.step | 17d ago |
| s8550t-hero.glb | 17d ago |
| s8550t-hero.overlay.json | 17d ago |
| s8550t.glb | 17d ago |
| s8550t.kicad_mod | 17d ago |
| s8550t.kicad_sym | 17d ago |
| s8550t.lbr | 17d ago |
| s8550t.step | 17d ago |
S8550T
Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-523
S8550T from Slkor SLKORMICRO Elec, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; VEBO max -5 V and emitter-base breakdown V(BR)EBO min -5 V at IE=-100µA. |
| 2 | E | passive | Emitter of the PNP transistor; IEBO max -0.1 µA at VEB=-3V. |
| 3 | C | passive | Collector of the PNP transistor; VCEO -25 V, VCBO -40 V, continuous IC -0.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -25 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current -Continuous | IC | -0.5 | A | 1 | |||
| Collector Power Dissipation | PC | 0.3 | W | 1 | |||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC = -100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC =-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE= -100µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | µA | VCB= -40V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | µA | VEB= -3V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 200 | 350 | VCE= -1V, IC= -50mA | 1 | ||
| DC current gain | hFE(2) | 50 | VCE= -1V, IC= -500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.6 | V | IC=-500mA, IB= -50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-500mA, IB= -50mA | 1 |
CAD (KiCad official)
- Symbol:
S8550T - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
s8550t-etched.step/s8550t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8550t.step/s8550t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (3 pp, sha256
fbfcfe1040be6e79, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).