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Contents

README

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S8550MG-D

Foshan Blue Rocket Elec · Bipolar Transistors - BJT · SOT-23

S8550MG-D from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the silicon PNP transistor, which the datasheet describes as complementary to the S8050MG and intended for power amplifier circuits.
2 Emitter passive Emitter terminal of the PNP transistor; the datasheet's absolute maximum ratings limit emitter-to-base voltage VEBO to -6.0 V and collector current IC to -800 mA.
3 Collector passive Collector terminal of the PNP transistor; the datasheet's absolute maximum ratings limit collector-to-emitter voltage VCEO to -25 V and collector-to-base voltage VCBO to -40 V, with collector power dissipation PC of 450 mW.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO -40 V Ta=25℃ 2
Collector to Emitter Voltage VCEO -25 V Ta=25℃ 2
Emitter to Base Voltage VEBO -6 V Ta=25℃ 2
Collector Current IC -800 mA Ta=25℃ 2
Base Current IB -200 mA Ta=25℃ 2
Collector Power Dissipation PC 450 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -65 150 ℃ 2
Collector to Base Breakdown Voltage VCBO -40 V IC=-0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO -25 V IC=-2.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO -6 V IE=-0.1mA IC=0 2
Collector Cut-Off Current ICBO -0.1 μA VCB=-35V IE=0 2
Emitter Cut-off Current IEBO -0.1 μA VEB=-6.0V IC=0 2
DC Current Gain hFE(1) hFE(1) 85 300 VCE=-1.0V IC=-100mA 2
DC Current Gain hFE(2) hFE(2) 40 VCE=-1.0V IC=-500mA 2
DC Current Gain hFE(3) hFE(3) 45 VCE=-1.0V IC=-5.0mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.28 -0.6 V IC=-500mA IB=-50mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.2 V IC=-500mA IB=-50mA 2
Base-Emitter Voltage VBE -0.66 -1 V VCE=-1.0V IC=-10mA 2
Transition Frequency fT 100 200 MHz VCE=-10V IC=-50mA 2
Collector Output Capacitance Cob 15 pF VCB=-10V IE=0 f=1.0MHz 2
DC Current Gain hFE grade D (classification range) hFE 160 300 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB -200 mA Collector Power Dissipation PC 450 mW 2

CAD (KiCad official)

  • Symbol: S8550MG-D
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s8550mg-d-etched.step / s8550mg-d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s8550mg-d.step / s8550mg-d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 afd54bf9f7b6e97e, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF