component
S8205A
Public Made by Adomby adom
Guangdong Hottech MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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s8205a: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -24,6 +24,38 @@ S8205A from Guangdong Hottech, in a SOT-23-6. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source breakdown voltage | V(BR)DSS | 20 | | | V | VGS=0V, ID=250μA | 1 |+| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS=16V, VGS=0V | 1 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 1 |+| Gate-threshold voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS=VGS, ID=250μA | 1 |+| Drain-source on-resistance | RDS(ON) | | 22 | 25 | mΩ | VGS=4V, ID=5A | 1 |+| Drain-source on-resistance | RDS(ON) | | 38 | 40 | mΩ | VGS=2.5V, ID=4A | 1 |+| Diode forward voltage | VSD | | 0.42 | 1.28 | V | IS=1.7A, VGS=0V | 1 |+| Drain-source voltage | VDS | | | 20 | V | | 1 |+| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous drain current | ID | | | 5 | A | TA = 25°C | 1 |+| Pulsed drain current | IDM | | | 25 | A | | 1 |+| Power dissipation | PD | | | 1.25 | W | | 1 |+| Junction and Storage temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |+| Thermal resistance from Junction to ambient | RθJA | | | 100 | °C/W | | 1 |+| Forward transconductance | gFS | | 13 | | S | VDS=5V, ID=5A | 1 |+| Input capacitance | Ciss | | 800 | | pF | | 1 |+| Output capacitance | Coss | | 155 | | pF | VDS=8V, VGS=0V, f=1MHz | 1 |+| Reverse transfer capacitance | Crss | | 125 | | pF | | 1 |+| Total gate charge | Qg | | 11 | | nC | | 1 |+| Gate-source charge | Qgs | | 2.2 | | nC | VGS=4V,VDS=10V,ID=4A | 1 |+| Gate-drain charge | Qgd | | 2.5 | | nC | | 1 |+| Turn-on delay time | td(on) | | 18.3 | | nS | VDD=10V, ID=1.0A,VGEN=4V, RGEN=10Ω,RL=10Ω | 1 |+| Turn-on rise time | tr | | 4.8 | | nS | | 1 |+| Turn-off delay time | td(off) | | 43.5 | | nS | | 1 |+| Turn-off fall time | tf | | 20 | | nS | | 1 |+ ## CAD (KiCad official) - Symbol: `S8205A`
page.json+308−1@@ -168,6 +168,313 @@ "Package": "SOT-23-6", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "80f33e8f88f76e85",+ "rows": [+ {+ "name": "Drain-Source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=16V, VGS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±12V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": 0.8,+ "max": 1,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 22,+ "max": 25,+ "conditions": "VGS=4V, ID=5A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 38,+ "max": 40,+ "conditions": "VGS=2.5V, ID=4A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.42,+ "max": 1.28,+ "conditions": "IS=1.7A, VGS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance from Junction to ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "VDS=5V, ID=5A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 800,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 155,+ "max": null,+ "conditions": "VDS=8V, VGS=0V, f=1MHz",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 125,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.2,+ "max": null,+ "conditions": "VGS=4V,VDS=10V,ID=4A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "nS",+ "min": null,+ "typ": 18.3,+ "max": null,+ "conditions": "VDD=10V, ID=1.0A,VGEN=4V, RGEN=10Ω,RL=10Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "nS",+ "min": null,+ "typ": 4.8,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "nS",+ "min": null,+ "typ": 43.5,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "nS",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -209,4 +516,4 @@ "visibility": { "public": true }-}+}