# S8050-MS

**MSKSEMI** · Bipolar (BJT) · SOT-23

S8050-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet's maximum ratings give VEBO 5 V and the base-emitter saturation voltage VBE(sat) of 1.2 V at IC=500 mA, IB=50 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet's maximum ratings give VEBO 5 V and IC continuous 0.5 A. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet's maximum ratings give VCBO 40 V, VCEO 25 V and IC continuous 0.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 |  |  | V | IC= 100μA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 |  |  | V | IC=1mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100μA, IC=0 | 2 |
| Collector cut-off current | ICBO |  |  | 0.1 | μA | VCB=40 V, IE=0 | 2 |
| Emitter cut-off current | IEBO |  |  | 0.1 | μA | VEB= 5V, IC=0 | 2 |
| DC current gain hFE(1) | hFE(1) | 120 |  | 400 |  | VCE=1V, IC=50mA | 2 |
| Collector-emitter voltage (absolute maximum) | VCEO |  |  | 25 | V |  | 2 |
| Collector-base voltage (absolute maximum) | VCBO |  |  | 40 | V |  | 2 |
| Emitter-base voltage (absolute maximum) | VEBO |  |  | 5 | V |  | 2 |
| Collector current, continuous (absolute maximum) | IC |  |  | 0.5 | A |  | 2 |
| Collector dissipation (absolute maximum) | PC |  |  | 0.3 | W |  | 2 |
| Junction temperature (absolute maximum) | Tj |  |  | 150 | ℃ |  | 2 |
| Storage temperature (absolute maximum) | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Thermal resistance, junction to ambient | R。JA |  |  | 417 | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `S8050-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `s8050-ms-etched.step` / `s8050-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s8050-ms.step` / `s8050-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590236674459533312) (5 pp, sha256 `5f4b167970e0dce8`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/s8050-ms-datasheet.pdf)