component

S8050-G

Public Made by Adom

by adom

Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorss8050-gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers s8050-g: viewers · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago
s8050-g-etched.glb Publish 0.1.0 · Ray 17d ago
s8050-g-etched.step s8050-g: factory component page (tier=lcsc) · Ray 17d ago
s8050-g-hero.glb s8050-g: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
s8050-g-hero.overlay.json Publish 0.1.0 · Ray 17d ago
s8050-g.glb Publish 0.1.0 · Ray 17d ago
s8050-g.kicad_mod Publish 0.1.0 · Ray 17d ago
s8050-g.kicad_sym Publish 0.1.0 · Ray 17d ago
s8050-g.lbr Publish 0.1.0 · Ray 17d ago
s8050-g.step Publish 0.1.0 · Ray 17d ago

S8050-G

Changjing · Bipolar (BJT) · SOT-23

S8050-G from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet rates the emitter-base voltage VEBO at 5 V.
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is specified as 5 V at IE = 100 µA.
3 COLLECTOR passive Collector terminal of the NPN transistor; the datasheet rates VCBO at 40 V, VCEO at 25 V and collector current IC at 500 mA.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 40 V IC= 100μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 25 V IC=1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA, IC=0 1
Collector cut-off current ICBO 0.1 μA VCB=40 V, IE=0 1
Emitter cut-off current IEBO 0.1 μA VEB= 5V, IC=0 1
DC current gain hFE(1) hFE(1) 120 400 VCE=1V, IC= 50mA 1
DC current gain hFE(2) hFE(2) 50 VCE=1V, IC= 500mA 1
Collector-emitter saturation voltage VCE(sat) 0.6 V IC=500 mA, IB= 50mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC=500 mA, IB= 50mA 1
Collector-Base Voltage VCBO 40 V 1
Collector-Emitter Voltage VCEO 25 V 1
Emitter-Base Voltage VEBO 5 V 1
Collector Current IC 500 mA 1
Collector Power Dissipation PC 300 mW 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance From Junction To Ambient RΘJA 417 ℃/W 1
Transition frequency fT 150 MHz VCE=6V, IC=20mA, f=30MHz 1

CAD (KiCad official)

  • Symbol: S8050-G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s8050-g-etched.step / s8050-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s8050-g.step / s8050-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 4900390b8efd0c9a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF