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S8050-D

Public Made by Adom

by adom

Foshan Blue Rocket Elec Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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S8050-D

Foshan Blue Rocket Elec · Bipolar Transistors - BJT · TO-92

S8050-D from Foshan Blue Rocket Elec, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector; VCBO 40 V, VCEO 25 V, continuous collector current IC 800 mA.
2 B passive Base; continuous base current IB 200 mA, emitter-to-base voltage VEBO 6.0 V.
3 E passive Emitter of the NPN transistor.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package TO-92
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO 40 V Ta=25℃ 2
Collector to Emitter Voltage VCEO 25 V Ta=25℃ 2
Emitter to Base Voltage VEBO 6 V Ta=25℃ 2
Collector Current - Continuous IC 800 mA Ta=25℃ 2
Base Current - Continuous IB 200 mA Ta=25℃ 2
Collector Power Dissipation PC 625 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ Ta=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ Ta=25℃ 2
Collector to Base Breakdown Voltage VCBO 40 V IC=0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO 25 V IC=2.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO 6 V IE=0.1mA IC=0 2
Collector Cut-Off Current ICBO 0.1 μA VCB=35V IE=0 2
Emitter Cut-Off Current IEBO 0.1 μA VEB=6.0V IC=0 2
DC Current Gain (1) hFE(1) 85 300 VCE=1.0V IC=100mA 2
DC Current Gain (2) hFE(2) 40 VCE=1.0V IC=500mA 2
DC Current Gain (3) hFE(3) 45 VCE=1.0V IC=5.0mA 2
hFE Classification D range hFE 160 300 hFE Classifications, grade D 1
Collector to Emitter Saturation Voltage VCE(sat) 0.28 0.6 V IC=500mA IB=50mA 2
Base to Emitter Saturation Voltage VBE(sat) 0.98 1.2 V IC=500mA IB=50mA 2
Base to Emitter Voltage VBE 0.66 1 V VCE=1.0V IC=10mA 2
Transition Frequency fT 100 190 MHz VCE=10V IC=50mA 2
Collector Output Capacitance Cob 9 pF VCB=10V IE=0 f=1.0MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. PC,IC 大,与 S8550 互补。 1

CAD (KiCad official)

  • Symbol: S8050-D
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: s8050-d-etched.step / s8050-d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s8050-d.step / s8050-d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 802f1d8908befef1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF