component
S8050-6AF
Public Made by Adomby adom
FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| s8050-6af-etched.glb | 13d ago |
| s8050-6af-etched.step | 13d ago |
| s8050-6af-hero.glb | 13d ago |
| s8050-6af-hero.overlay.json | 13d ago |
| s8050-6af.glb | 13d ago |
| s8050-6af.kicad_mod | 13d ago |
| s8050-6af.kicad_sym | 13d ago |
| s8050-6af.lbr | 13d ago |
| s8050-6af.step | 13d ago |
S8050-6AF
FOSAN · Bipolar (BJT) · SOT-23
S8050-6AF from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet gives VEBO = 5 V max and BVEBO min 5 V at IE=100uA. |
| 2 | E | passive | Emitter of the NPN transistor; the datasheet gives VEBO = 5 V max. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet gives VCBO = 40 V, VCEO = 25 V, IC = 500 mA continuous and ICM = 800 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 25 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 500 | mA | 1 | |||
| Collector Current (peak) | ICM | 800 | mA | 1 | |||
| Power dissipation | PC | 300 | mW | Ta=25℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 417 | ℃/W | 1 | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-Base Breakdown Voltage | BVCBO | 40 | V | IC=100uA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 25 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE=100uA, IC=0 | 2 | ||
| Collector-Base Leakage Current | ICBO | 100 | nA | VCB=40V, IE=0 | 2 | ||
| Collector-Emitter Punch Through Current | ICES | 100 | nA | VCE=20V, VBE=0 | 2 | ||
| Emitter-Base Leakage Current | IEBO | 100 | nA | VEB=3V, IC=0 | 2 | ||
| DC Current Gain | HFE(1) | 85 | 400 | VCE=1V, IC=100mA | 2 | ||
| DC Current Gain | HFE(2) | 40 | VCE=1V, IC=800mA | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC=500mA, IB=50mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC=500mA, IB=50mA | 2 |
CAD (KiCad official)
- Symbol:
S8050-6AF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s8050-6af-etched.step/s8050-6af-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8050-6af.step/s8050-6af.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (4 pp, sha256
f21210d3d522905c, retrieved 2026-10-21, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).